BD241A/B/C BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD241A BD241B BD241C PNP BD242A BD242B BD242C V CER Collector-Base Voltage (R BE = 100 Ω) 70 90 115 V V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 3 A Collector Peak Current 5 A IC I CM IB Base Current P tot Total Dissipation at T c ≤ 25 o C P tot Total Dissipation at T amb ≤ 25 o C T stg Tj Storage Temperature Max. Operating Junction Temperature 1 A 40 W 2 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. June 1997 1/4 BD241A/B/C/BD242A/B/C THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.13 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = rated V CEO I CEO Collector Cut-off Current (I B = 0) for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V CE(sat) ∗ V CE = 30 V V CE = 60 V V CE = 60 V I C = 30 mA for BD241A/BD242A for BD241B/BD242B for BD241C/BD242C Typ. Max. Unit 0.2 mA 0.3 0.3 0.3 mA mA mA 1 mA 60 80 100 V V V Collector-Emitter Saturation Voltage IC = 3 A I B = 0.6 A 1.2 V V BE ∗ Base-Emitter Voltage IC = 3 A V CE = 4 V 1.8 V h FE ∗ DC Current Gain IC = 1 A IC = 3 A V CE = 4 V V CE = 4 V Small Signal Current Gain I C = 0.5 A I C = 0.5 A V CE = 10 V V CE = 10 V hfe ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP types voltage and current values are negative. For the characteristics curves see TIP31/TIP32 series. 2/4 Min. 25 10 f = 1MHz f = 1KHz 3 20 BD241A/B/C/BD242A/B/C TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 BD241A/B/C/BD242A/B/C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4