BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS ■ COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO VCER V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 o C Storage Temperature Max. Operating Junction Temperature BD707 BD708 60 60 60 Value BD709 80 80 80 5 12 18 5 75 -65 to 150 150 Un it BD711 BD712 100 100 100 V V V V A A A W o C o C For PNP types voltage and current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.67 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Max. Unit for BD707/708 for BD709 for BD711/712 T case = 150 oC for BD707/708 for BD709 for BD711/712 Test Con ditions V CB = 60 V V CB = 80 V V CB = 100 V 100 100 100 µA µA µA V CB = 60 V V CB = 80 V V CB = 100 V 1 1 1 mA mA mA V CE = 30 V V CE = 40 V V CE = 50 V 100 100 100 mA mA mA 1 mA I CEO Collector Cut-off Current (IB = 0) for BD707/708 for BD709 for BD711/712 IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(s us) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 100 mA for BD707/708 for BD709 for BD711/712 T yp. 60 80 100 IC = 4 A I B = 0.4 A V V V 1 V V CEK ∗ Knee Voltage IC = 3 A I B = ** 0.4 V V BE ∗ Base-Emitter Voltage IC = 4 A V CE = 4 V 1.5 V h F E∗ DC Current Gain I C = 0.5 A IC = 2 A IC = 4 A I C = 10 A fT Transition frequency I C = 300 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ** Value for which IC = 3.3 A at VCE = 2V. For PNP types voltage and current values are negative. 2/6 Min. V CE = 2 V V CE = 2 V for BD707/708 for BD709 V CE = 4 V V CE = 4 V for BD707/708 for BD709 for BD711/712 VCE = 3 V 40 120 30 30 15 5 3 400 150 10 8 8 MHz BD707/708/709/711/712 Safe Operating Areas Derating Curve DC Current Gain(NPN type) DC Current Gain(PNP type) DC Transconductance(NPNtype) DC Transconductance(PNPtype) 3/6 BD707/708/709/711/712 Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6 BD707/708/709/711/712 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. inch 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BD707/708/709/711/712 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6