BDX87C BDX88C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX87C is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary PNP types is the BDX88C. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K Ω R2 Typ. = 55 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN BDX87C PNP BDX88C Unit V CBO Collector-base Voltage (I E = 0) 100 V V CEO Collector-emitter Voltage (I B = 0) 100 V V EBO Emitter-base Voltage (I C = 0) 5 V IC I CM IB Collector Current 12 A Collector Peak Current (repetitive) 18 A Base Current 0.2 A P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj June 1997 o Max. Operating Junction Temperature 120 W -65 to 200 o C 200 o C 1/4 BDX87C-BDX88C THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.45 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO Parameter Test Conditions Min. Typ. Max. Unit 0.5 5 mA mA Collector Cut-off Current (I E = 0) V CB = 100 V V CB = 100 V I CEO Collector Cut-off Current (I B = 0) V CB = 50 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) T case = 150 o C I C = 100 mA 100 V V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 6 A I C = 12 A I B = 24 mA I B = 120 mA 2 3 V V V BE(sat) ∗ Base-emitter Saturation Voltage I C = 12 A I B =120 mA 4 V V BE ∗ Base-emitter Voltage IC = 6 A V CE = 3 V 2.8 V h FE ∗ DC Current Gain IC = 5 A IC = 6 A I C = 12 A V CE = 3 V V CE = 3 V V CE = 3 V VF∗ hfe ∗ Parallel-diode Forward Voltage IF = 3 A IF = 8 A Small SignalCurrent Gain IC = 5 A f = 1MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. 2/4 1000 750 100 18000 1.8 2.5 V CE = 3 V 25 V V BDX87C-BDX88C TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BDX87C-BDX88C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4