BDY90 HIGH CURRENT NPN SILICON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value V CBO Collector-base Voltage (I E = 0) 120 V V CEV Collector-emitter Voltage (V BE = -1.5V) 120 V V CEO Collector-emitter Voltage (I B = 0) 100 V V EBO Emitter-base Voltage (I C = 0) IC I CM IB 6 V Collector Current 10 A Collector Peak Current (repetitive) 15 A Base Current P tot Total Dissipation at T c ≤ 25 o C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 2 A 60 W -65 to 175 o C 175 o C 1/4 BDY90 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CE = V CBO 1 mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = V CEV T case = 150 o C V CE = V CEV 1 mA 3 mA V EB = 6 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA 100 V V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 5 A I C = 10 A I B = 0.5 A IB = 1 A 0.5 1.5 V V V BE(sat) ∗ Base-emitter Saturation Voltage IC = 5 A I C = 10 A I B = 0.5 A IB = 1 A 1.2 1.5 V V DC Current Gain IC = 1 A IC = 5 A I C = 10 A V CE = 2 V V CE = 5 V V CE = 5 V Transition-Frequency I C = 0.5 A f = 5 MHz V CE = 5 V t on Turn-on Time IC = 5 A V CC = 30 V I B1 = 0.5 A ts Storage Time I B1 = -I B2 = 0.5 A tf Fall Time IC = 5 A V CC = 30 V h FE ∗ ft ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 30 30 20 120 70 MHz 0.35 µs 1.3 µs 0.2 µs BDY90 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BDY90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4