Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features General Description Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Applications 100% UIL Tested Load Switch RoHS Compliant Synchronous Rectifier D2 D2 D1 D1 G2 S2 G1 5 5 D2 66 D1 77 D1 S1 Pin 1 D2 88 Q2 Q1 4 4 G2 33 S2 22 G1 1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage VGS ID Parameter Ratings -80 Units V Gate to Source Voltage ±20 V Drain Current -Continuous -2.1 -Pulsed -10 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) 37 Power Dissipation TA = 25 °C (Note 1a) 3.1 Power Dissipation TA = 25 °C (Note 1b) 1.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS8935 Device FDS8935 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET November 2010 FDS8935 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -64 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA -3 V -80 V -61 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C VGS = -10 V, ID = -2.1 A 148 183 rDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -1.9 A 176 247 VGS = -10 V, ID = -2.1 A,TJ = 125 °C 249 308 VDS = -10 V, ID = -2.1 A 6.4 gFS Forward Transconductance -1 -1.8 5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -40 V, VGS = 0 V, f = 1MHz 661 879 pF 47 63 pF 24 36 pF Ω 6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = -40 V, ID = -2.1 A, VGS = -10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to -10 V Qg(TOT) Total Gate Charge VGS = 0 V to -5 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -40 V, ID = -2.1 A 5 10 ns 3 10 ns 22 36 ns 3 10 ns 13 19 nC 7 10 nC 1.6 nC 2.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.1 A (Note 2) -1.8 -1.3 VGS = 0 V, IS = -1.3 A (Note 2) -0.8 -1.2 IF = -2.1 A, di/dt = 300 A/μs V 19 30 ns 34 54 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a)78 °C/W when mounted on a 1 in2 pad of 2 oz copper b)135 °C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V. ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 2 www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 10 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -10 V -ID, DRAIN CURRENT (A) VGS = -5 V 8 V = -4 V GS VGS = -3.5 V 6 4 VGS = -3 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VGS = -3 V 2.5 VGS = -3.5 V 2.0 1.5 1.0 VGS = -4 V 0.5 0 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 -50 ID = -2.1 A 200 TJ = 25 oC 0 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VDS = -5 V 6 4 TJ = 25 oC 2 TJ = -55 oC 3 4 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 8 2 2 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 150 oC PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ = 150 oC 400 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 10 1 10 600 Figure 3. Normalized On- Resistance vs Junction Temperature 0 8 800 ID = - 2.1 A VGS = -10 V 0.4 -75 4 6 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 1.8 VGS = -10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.0 Figure 1. On-Region Characteristics VGS = -5 V 20 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 0.001 0.0 5 VGS = 0 V TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 3 1.2 www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = -2.1 A VDD = -20 V Ciss 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = -40 V 6 VDD = -60 V 4 Coss 100 2 0 0 3 6 9 12 10 0.1 15 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 2.2 2.5 2.0 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 1.8 1.6 TJ = 100 oC 1.4 TJ = 125 oC 1.2 2.0 VGS = -10 V 1.5 VGS = -4.5 V 1.0 Limited by package 0.5 o RθJA = 78 C/W 1.0 0.1 1 0.0 25 10 50 tAV, TIME IN AVALANCHE (ms) 125 150 o Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms 1 10 ms 0.01 0.005 0.1 100 1000 20 10 0.1 75 TA, Ambient TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W TA = 25 oC 1 1s 10 s DC 10 100 300 o RθJA = 135 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C SINGLE PULSE VGS = -10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 5 www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C 6 www.fairchildsemi.com FDS8935 Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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