BU806 BU807 ® MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ 3 1 DESCRIPTION The devices are silicon epitaxial planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-base Voltage (I E = 0) V CEV V CEO Collector-emitter Voltage (V BE = -6V) Collector-emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) Value Unit BU806 400 BU807 330 V 400 200 330 150 V V 6 V IC I CM Collector Current Collector Peak Current 8 15 A A I DM IB Damper Diode Peak Forward Current Base Current 10 2 A A P tot T stg Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Tj January 1999 60 -65 to 150 150 W o o C C 1/4 BU806 / BU807 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.08 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) for BU807 for BU806 V CE = 330 V V CE = 400 V 100 100 µA µA I CEV Collector Cut-off Current (V BE = -6V) for BU807 for BU806 V CE = 330 V V CE = 400 V 100 100 µA µA I EBO Emitter Cut-off Current (I C = 0) V EB = 6 V 3.5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 100 mA for BU807 for BU806 150 200 V V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 5A I B = 50mA 1.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 5A I B = 50mA 2.4 V Damper Diode Forward Voltage I F = 4A 2 V 1 µs µs µs µs VF∗ t on t off ts tf RESISTIVE LOAD Turn-on Time Turn-off Time Storage Time Fall Time IC = 5 A I B1 = 50 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % 2/4 V CC = 100 V I B2 = -500 mA 0.35 0.4 0.55 0.2 BU806 / BU807 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BU806 / BU807 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4