BUF420M ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES ■ MOTOR CONTROL DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 2 TO-3 (version "R") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 850 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB 7 V Collector Current 30 A Collector Peak Current (t p < 5 ms) 60 A A Base Current 6 I BM Base Peak Current (t p < 5 ms) 9 A P tot Total Dissipation at T c = 25 o C 275 W T stg Storage Temperature Tj March 2002 Max. Operating Junction Temperature -65 to 200 o C 200 o C 1/8 BUF420M THERMAL DATA R thj-case Thermal Resistance Junction-Case Max o 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit I CER Collector Cut-off Current (R BE = 5 Ω) V CE = 850 V V CE = 850 V T C = 100 o C 0.2 1 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 850 V V CE = 850 V T C = 100 o C 0.2 1 mA mA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) ∗ V BE(sat) ∗ di c /dt V CE (3µs) V CE (5µs) I C = 200 mA L = 25 mH Emitter Base Voltage (I C = 0) I E = 50 mA Collector-Emitter Saturation Voltage IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 4 4 A A A A IC IC IC IC = = = = 10A 10 A 20 A 20 A IB IB IB IB = = = = 1 1 4 4 A A A A Base-Emitter Saturation Voltage Rate of rise on-state Collector Current Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I B1 = 6 A V 7 V 0.8 2.8 0.5 T C =100 o C 2 0.9 T C =100 o C 1.5 1.1 T C =100 o C RC = 0 t p = 3 µs T C =25 o C T C =100 o C T C =100 o C 1.5 100 R C = 60 Ω T C =25 o C T C =100 o C 2.1 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A R C = 60 Ω T C =25 o C T C =100 o C 1.1 I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω I B1 = 1 A ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.6 Ω I B1 = 1 A T C =100 o C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = - 5 V I B1 = 1 A T C =125 o C V CC = 50 V R BB = 0.6 Ω L = 0.25 mH INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω I B1 = 1 A V V V V 8 V V 4 V V µs µs µs 1 0.05 0.08 2 0.1 0.18 500 V V V V A/µs A/µs A/µs 70 150 V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A INDUCTIVE LOAD Storage Time Fall Time Cross Over Time ts tf tc 450 T C =100 o C ts tf tc V CEW 2/8 Test Conditions µs µs µs V 1.5 0.04 0.07 µs µs µs BUF420M ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH V CC = 50 V R BB = 0.15 Ω I B1 = 1 A T C =100 o C Maximum Collector Emitter Voltage without Snubber I C = 10 A V BB = 0 I B1 = 1 A T C =125 o C V CC = 50 V R BB = 0.15 Ω L = 0.25 mH ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 20 A V BB = -5 V V clamp = 400 V L = 0.12 mH V CC = 50 V R BB =0.6 Ω I B1 = 4 A ts tf tc INDUCTIVE LOAD Storage Time Fall Time Cross Over Time I C = 20 A V BB = - 5 V V clamp = 400 V L = 0.12 mH V CC = 50 V R BB = 0.6 Ω I B1 = 4 A T C =125 o C Maximum Collector Emitter Voltage without Snubber I CWoff = 30 A V BB = - 5 V L = 0.12 mH T C =125 o C V CC = 50 V R BB = 0.6 Ω I B1 = 6 A ts tf tc V CEW V CEW Min. Typ. Max. Unit 3 0.15 0.25 µs µs µs 500 V µs µs µs 2.2 0.06 0.12 3.5 0.12 0.3 400 µs µs µs V 3/8 BUF420M DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Forward Biased Safe Operating Area Reverse Biased Safe Operating Area 4/8 BUF420M Storage Time Versus Pulse Time. Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8 BUF420M Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). 6/8 BUF420M TO-3 (version R) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 7/8 BUF420M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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