BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS 3 3 DESCRIPTION The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Un it V CBO Collector-Base Voltage (I E = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 700 V VEBO Emitter-Base Voltage (IC = 0) 10 V Collector Current 14 A Collector Peak Current (tp < 5 ms) 18 A Base Current 8 A 11 A IC I CM IB I BM Parameter Base Peak Current (tp < 5 ms) o P tot T otal Dissipation at Tc = 25 C T s tg Storage Temperature Tj Max. Operating Junction T emperature December 1999 160 70 W -65 to 150 o C 150 o C 1/8 BUH1015/BUH1015HI THERMAL DATA TO -218 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 0.78 o 1.8 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ . Tj = 125 o C Max. Un it 0.2 2 mA mA 100 µA I C = 100 mA 700 V Emitter-Base Voltage (I C = 0) I E = 10 mA 10 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 10 A IB = 2 A 1.5 V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 10 A IB = 2 A 1.5 V DC Current G ain I C = 10 A I C = 10 A V CE = 5 V V CE = 5 V V EBO hFE∗ o T j = 100 C ts tf RESISTIVE LO AD Storage Time Fall T ime V CC = 400 V I B1 = 2 A IC = 10 A I B2 = -6 A ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 10 A I B1 = 2 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 6 A f = 64 KHz I B1 = 1 A V beo ff = - 2 V π V c eflybac k = 1100 sin 106 t 5 f = 31250 Hz IB2 = -6 A π V c eflybac k = 1200 sin 106 t V 5 7 5 10 14 1.5 110 µs ns 4 220 µs ns 3.7 200 µs ns V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area For TO-218 2/8 Safe Operating Area For ISOWATT218 BUH1015/BUH1015HI Thermal Impedance for TO-218 Thermal Impedance for ISOWATT218 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8 BUH1015/BUH1015HI Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, T j. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the 4/8 optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 ω = 2 πf = L C √ Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUH1015/BUH1015HI Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/8 BUH1015/BUH1015HI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 6/8 1 2 3 P025A BUH1015/BUH1015HI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 7/8 BUH1015/BUH1015HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 8/8