BUL138 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL138 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (V BE = 0) 800 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) 9 V 5 A 10 A IC I CM Collector Current Collector Peak Current (tp < 5 ms) Base Current 2 A I BM Base Peak Current (tp < 5 ms) 4 A P t ot Total Dissipation at Tc = 25 C IB T stg Tj May 1999 o St orage Temperature Max. Operating Junction Temperature 80 W -65 to 150 o C 150 o C 1/6 BUL138 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V Collector Cut-off Current (I B = 0) V CE = 400 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage I E = 10 mA Collector-Emitter Saturation Voltage IC IC IC IC IC = = = = = 1 2 3 4 5 A A A A A Typ . Tj = 125 o C L = 25 mH IB IB IB IB IB = = = = = 250 µA V 0.5 0.7 1 1 V V V V V 1.1 1.3 1.5 V V V 0.7 IB = 0.2 A IB = 0.4 A IB = 0.6 A DC Current Gain IC = 2 A I C = 10 mA V CE = 5 V V CE = 5 V RESISTIVE LO AD Storage Time IC = 2 A V CC = 250 V IB1 = -IB2 = 0.4 A ts ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 2 A V BE(of f) = -5 V V CL = 250 V IB1 = 0.4 A R BB = 0 Ω L = 200 µH 0.7 50 ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 2 A V BE(of f) = -5V V CL = 250 V o T j = 125 C IB1 = 0.4 A R BB = 0 Ω L = 200 µH 1 75 Derating Curve µA µA 9 IC = 1 A IC = 2 A IC = 3 A Safe Operating Areas Un it 100 500 V 0.2 A 0.4 A 0.6 A 1 A 1 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Max. 400 Base-Emitt er Saturation Voltage h F E∗ 2/6 Min. 8 10 40 2.4 3.5 µs 1.4 100 µs ns µs ns BUL138 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL138 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 4/6 BUL138 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL138 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6