BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE HIGH RUGGEDNESS APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CES Collector-Emitter Voltage (V BE = 0) 1600 V CEO Collector-Emitter Voltage (I B = 0) 800 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 4 A Collector Peak Current (tp < 5 ms) 6 A IC I CM Base Current 2 A I BM Base Peak Current (t p < 5 ms) 4 A P t ot Total Dissipation at T c = 25 o C 90 IB T stg Tj St orage Temperature Max. Operating Junction Temperature September 1997 W -65 to 150 o C 150 o C 1/6 BUL216 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.39 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 100 500 µA µA 250 µA I CES Collector Cut-off Current (V BE = 0) V CE = 1600 V V CE = 1600 V I CEO Collector Cut-off Current (IB = 0) V CE = 800 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IB = 0.2 A IB = 0.66 A 1 3 V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IB = 0.2 A IB = 0.66 A 1.2 1.2 V V DC Current G ain I C = 0.4 A I C = 10 mA ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 1.5 A V BE(of f) = -5 V V CL = 250 V IB1 = 0.5 A R BB = 0 Ω L = 200 µH 2.1 450 ts tf INDUCTIVE LOAD Storage Time Fall T ime I C = 1.5 A V BE(of f) = -5 V V CL = 250 V o T j = 100 C IB1 = 0.5 A R BB = 0 Ω L = 200 µH 3 600 V CEO(sus) V EBO h FE∗ Tj = 125 o C L = 25 mH V CE = 5 V V CE = 5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Derating Curve 800 V 9 V 12 10 40 3.3 720 µs ns µs ns BUL216 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL216 Inductive Fall Time Inductive Storage Time Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL216 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6 BUL216 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6