BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ■ ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL381D and BUL382D are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V V CES Collector-Emitter Voltage (V BE = 0) 800 V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 5 A Collector Peak Current (tp < 5 ms) 8 A Base Current 2 A IC I CM IB I BM Base Peak Current (t p < 5 ms) P t ot Total Dissipation at T c = 25 C T stg St orage Temperature Tj July 1997 o Max. Operating Junction Temperature 4 A 70 W -65 to 150 o C 150 o C 1/6 BUL381D / BUL382D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it 100 500 µA µA 250 µA I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V I CEO Collector Cut-off Current (IB = 0) V CE = 400 V Collector-Emitter Sustaining Voltage I C = 100 mA Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A IB = 0.2 A IB = 0.4 A IB = 0.75 A 0.5 0.7 1.1 V V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A IB = 0.2 A IB = 0.4 A 1.1 1.2 V V DC Current G ain I C = 2 A VCE = 5 V I C = 10 mA V CE = 5 V RESISTIVE LO AD IC = 2 A V CC = 250 V tp = 30 µs I B1 = 0.4 A IB2 = -0.4 V for BUL381D for BUL382D for all 2.5 3 0.8 µs µs µs V CEO(sus) V EBO h FE∗ ts ts tf Storage Time Storage Time Fall T ime ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 2 A V BE(of f) = -5 V V CL = 250 V T j = 125 o C Vf Diode Forward Voltage IC = 2 A Tj = 125 oC L = 25 mH IB1 = 0.4 A R BB = 0 Ω L = 200 µH 2/6 V 9 V 8 10 1.5 2 µs µs 1.3 100 2.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 400 Derating Curve V BUL381D / BUL382D DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL381D / BUL382D Reverse Biased SOA Resistive Load Switching Test Ciurcuit RBSOA and Inductive Load Switching Test Circuits 1) Fast electronic switch 2) Non-inductive Resistor 1) F ast electronic switch 2) Non-inductive Resistor 3) F ast recovery rectifier 4/6 BUL381D / BUL382D TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/6 BUL381D / BUL382D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6