BUL59 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL59 is manufactured using high voltage Multi Epitaxial Mesa technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 850 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A IC I CM IB Parameter Collector Peak Current (t p <5 ms) Base Current I BM Base Peak Current (t p <5 ms) P tot o Total Dissipation at Tc = 25 C T stg Storage Temperature Tj June 2001 Max. Operating Junction Temperature 16 A 4 A 8 A 90 W -65 to 150 o C 150 o C 1/6 BUL59 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.39 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. I CES Collector Cut-off Current (V BE = 0) V CE = rated V CES V CE = rated V CES I EBO Emitter Cut-off Current (I C = 0) V EB = 9 V VCEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I C = 10 mA L = 25 mH V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 5 A I B = 0.4 A IB = 1 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 5 A I B = 0.4 A IB = 1 A V CEW Maximum Collector Emitter Voltage Without Snubber I C = 15 A V BB = -2.5 V t p = 10 µs R BB = 0 Ω L = 50µH 450 h FE ∗ DC Current Gain IC = 2 A IC = 5 A IC = 8 A V CE = 5 V V CE = 5 V V CE = 10 V 8 6 4 INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CC = 250 V ts tf T j = 125 o C I Bon = 0.4 A R BB = 0 Ω L = 200 µH ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Typ. Derating Curve Max. Unit 200 500 µA µA 100 µA 400 V 0.18 0.5 1.5 V V 1.2 1.6 V V V 40 30 0.8 0.15 µs µs BUL59 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL59 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 BUL59 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL59 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6