BUT90 HIGH POWER NPN SILICON TRANSISTOR ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS LOW COLLECTOR EMITTER SATURATION APPLICATIONS UNINTERRUPTABLE POWER SUPPLY ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 ■ 2 DESCRIPTION The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. TO-3 (version "S") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5 V) 200 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 50 A 120 A 12 A 32 A IC I CM IB Collector Peak Current Base Current I BM Base Peak Current P tot Total Power Dissipation at T case ≤ 25 C T stg Storage Temperature Tj April 1997 o Junction Temperature 250 W -65 to 200 o C 200 o C 1/4 BUT90 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off Current (R BE = 10 Ω) V CE = V CEV o V CE = V CEV T c = 100 C 0.4 4 mA mA I CEV Collector Cut-off Current V CE = V CEV V BE = -1.5V V CE = V CEV V BE = -1.5V T c = 100 o C 0.2 2 mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 0.2 A L = 25 mH 125 V 10 V Emitter-Base Voltage (IC = 0) I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC = = = = 35 70 35 70 A A A A IB IB IB IB = = = = 1.75 A 7A Tc = 100 o C 1.75 A 7A Tc = 100 o C 0.55 0.8 0.75 1.2 0.9 0.9 1.2 1.5 V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC IC IC IC = = = = 35 70 35 70 A A A A IB IB IB IB = = = = 1.75 A 7A T c = 100 o C 1.75 A o 7A T c = 100 C 1 1.45 1 1.65 1.3 1.8 1.4 2 V V V V Typ. Max. Unit V EB0 RESISTIVE LOAD Symbol Parameter Test Conditions Min. tr ts tf Rise Time Storage Time Fall Time V CC = 100 V I B1 = - I B2 = 7 A I C = 70 A t p = 30 µs 0.8 0.9 0.2 1.2 1.5 0.4 µs µs µs tr ts tf Rise Time Storage Time Fall Time V CC = 100 V I B1 = - I B2 = 7 A T c = 100 o C I C = 70 A t p = 30 µs 1.1 1.2 0.3 1.6 2 0.6 µs µs µs INDUCTIVE LOAD Symbol Typ. Max. Unit ts tf Storage Time Fall Time Parameter V CC = 100 V I C = 70 A L C = 70 µH Test Conditions V Clamp = 125 V I B1 = - I B2 = 7 A 1.25 0.16 2 0.3 ms µs ts tf Storage Time Fall Time V CC = 100 V I C = 70 A L C = 70 µH V Clamp = 125 V I B1 = - I B2 = 7 A T c = 100 o C 1.5 0.25 2.2 0.5 µs µs * Pulsed : Pulse duration = 300 µs, duty cycle = 2% 2/4 Min. BUT90 TO-3 (version S) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 1.47 1.60 0.058 0.063 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003O 3/4 BUT90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4