STMICROELECTRONICS BUT92

BUT92
FAST-SWITCHING POWER TRANSISTOR
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SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
hFE > 10 AT IC =35A
HIGH EFFICIENCY SWITCHING
VERY LOW SATURATION VOLTAGE
RECTANGULAR SAFE OPERATING AREA
WIDE ACCIDENTAL OVERLOAD AREA
1
APPLICATIONS
■ UNINTERRUPTABLE POWER SUPPLY
■ SWITCH MODE POWER SUPPLIES
■ MOTOR CONTROL
2
DESCRIPTION
The BUT92 is a Multiepitaxial Planar NPN
Transistor in TO-3 package. It is intended for use
in high frequency and efficency converters,
switching regulators and motor control.
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CEV
Collector-Emitter Voltage (V BE = -1.5 V)
350
V
V CEO
Collector-Emitter Voltage (I B = 0)
250
V
V EBO
Emitter-Base Voltage (I C = 0)
IE
I EM
IB
7
V
Emitter Current
50
A
Emitter Peak Current
75
A
Base Current
10
A
15
A
I BM
Base Peak Current
P tot
Total Power Dissipation at T case ≤ 25 C
T stg
Storage Temperature
Tj
June 1997
o
Junction Temperature
250
W
-65 to 200
o
C
200
o
C
1/4
BUT92
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
0.7
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CER
Collector Cut-off
Current (R BE = 10 Ω)
V CE = V CEV
o
V CE = V CEV T c = 100 C
0.4
4
mA
mA
I CEV
Collector Cut-off
Current
V CE = V CEV V BE = -1.5V
V CE = V CEV V BE = -1.5V T c = 100 o C
0.2
2
mA
mA
I EBO
Emitter Cut-off
Current (I C = 0)
V EB = 7 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
I C = 0.2 A
L = 25 mH
250
V
7
V
Emitter-Base Voltage
(IC = 0)
I E = 50 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 35 A
I C = 35 A
IB = 3.5 A
IB = 3.5 A
T j = 100 o C
0.8
1.25
1.2
1.9
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 35 A
I C = 35 A
IB = 3.5 A
IB = 3.5 A
T j = 100 o C
1.2
1.2
1.5
1.5
V
V
Rated of Rise on-state
Collector Current
V CC = 200V I B1 = 5.25 A R C = 0
t p = 3µs
T j = 100 o C
V CE(3µs) ∗
Collector-Emitter
Dynamic Voltage
V CC = 200V
R C = 5.7 Ω
I B1 = 5.25 A
T j = 100 o C
3
6
V
V CE(5µs) ∗
Collector-Emitter
Dynamic Voltage
V CC = 200V
R C = 5.7 Ω
I B1 = 5.25 A
T j = 100 o C
1.8
3
V
Typ.
Max.
Unit
1.4
0.15
0.3
3
0.4
0.7
µs
µs
µs
V EB0
di C /dt
125
200
A/µs
INDUCTIVE LOAD
Symbol
ts
tf
tc
V CEW
Parameter
Test Conditions
Storage Time
Fall Time
Crossover Time
V CC = 200 V
I C = 35 A
V BB = -5 V
R B2 = 0.7 Ω
Maximum Collector
Emitter Voltage
without Snubber
V CC = 50 V
V BB = -5 V
L C = 48 µH
T j = 125 o C
* Pulsed : Pulse duration = 300 µs, duty cycle = 2%
2/4
Min.
V Clamp = 250 V
I B1 = 3.5 A
L C = 0.28 mH
o
T j = 100 C
I CWoff = 52 A
I B1 = 3.5 A
R B2 = 0.7 Ω
250
V
BUT92
TO-3 (version S) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
1.47
1.60
0.058
0.063
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003O
3/4
BUT92
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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