BUW1215 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 21" MONITORS ■ 3 DESCRIPTION The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 1500 V V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) 700 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 16 A Collector Peak Current (t p < 5 ms) 22 A 9 A IC I CM IB Base Current I BM Base Peak Current (t p < 5 ms) 12 A P tot Total Dissipation at T c = 25 o C 200 W T stg Storage Temperature Tj Max. Operating Junction Temperature February 2002 -65 to 150 o C 150 o C 1/7 BUW1215 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ. T j = 125 o C I C = 100 mA Max. Unit 0.2 2 mA mA 100 µA 700 V 10 V Emitter-Base Voltage (I C = 0) I E = 10 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage I C = 12 A I B = 2.4 A 1.5 V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 12 A I B = 2.4 A 1.5 V DC Current Gain I C = 12 A I C = 12 A V EBO h FE ∗ V CE = 5 V V CE = 5 V ts tf RESISTIVE LOAD Storage Time Fall Time V CC = 400 V I B1 = 2 A ts tf INDUCTIVE LOAD Storage Time Fall Time I C = 12 A I B1 = 2 A ts tf INDUCTIVE LOAD Storage Time Fall Time V ceflyback IC = 6 A I B1 = 1 A V ceflyback T j = 100 o C I C = 12 A I B2 = -6 A 2/7 10 14 1.5 110 µs ns f = 31250 Hz I B2 = -1.5 A π = 1050 sin 106 t V 5 4 220 µs ns f = 64 KHz V BE(off) = -2 A π = 1200 sin 106 t V 5 3.5 180 µs ns * Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 7 5 Thermal Impedance BUW1215 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 64 KHz Switching Time Inductive Load at 64 KHz (see figure 2) 3/7 BUW1215 Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the 4/7 optimum negative drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 ω = 2 πf = L C √ Where IC = operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUW1215 Figure 1: Inductive Load Switching Test Circuit. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUW1215 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 6/7 BUW1215 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7