BUX22 HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ HIGH POWER TO-3 PACKAGE ■ 1 2 DESCRIPTION The BUX22 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. TO-3 (version P) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 300 V V CEX Collector-emitter Voltage (V BE = - 1.5V) 300 V V CEO Collector-emitter Voltage (I B = 0) 250 V V EBO Emitter-base Voltage (Ic = 0) 7 V IC I CM IB Collector Current 40 A Collector Peak Current (t p = 10 ms) 50 A 8 A Base Current P tot Total Power Dissipation at T case T stg Storage Temperature Tj June 1997 ≤ 25 C Max Operating Junction Temperature o 350 W -65 to 200 o C 200 o C 1/4 BUX22 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CEO Collector Cut-off Current (I B = 0) V CE = 200 V I CEX Collector Cut-off Current V CE = 300 V T case = 125 o C V CE = 300 V I EBO Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage Min. Typ. Max. Unit 3 mA V BE = -1.5V 3 mA V BE = -1.5V 12 mA 1 mA V EB = 5 V I C = 200 mA 250 V 7 V Emitter-Base Voltage (I C = 0) I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 10 A I C = 20 A IB = 1 A I B = 2.5 A 0.2 0.32 1 1.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 20 A I B = 2.5 A 1.1 1.5 V DC Current Gain I C = 10 A I C = 20 A V CE = 4 V V CE = 4 V Second Breakdown Collector Current V CE = 140 V V CE = 20 V t=1s t=1s fT Transistor Frequency V CE = 15 V f = 10 MHz t on Turn-on Time I C = 20 A V CC = 100 V I B1 = 2.5 A 0.22 1.3 µs ts tf Storage Time Fall Time I C = 20 A I B2 = - 2.5 A I B1 = 2.5 A V CC = 100V 1.5 0.17 2 0.5 µs µs Clamped E s/b Collector Current V clamp = 250 V L = 500 µH V EBO h FE ∗ I S/b ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 % 2/4 IC = 2 A 20 10 60 0.15 17.5 A A 10 MHz 25 A BUX22 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BUX22 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.