DTV32G-1500B (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MAIN PRODUCTS CHARACTERISTICS 6A VRRM 1500 V VF (max) 1.5 V K FEATURES AND BENEFITS A IF(AV) K HIGH BREAKDOWN VOLTAGE CAPABILITY HIGH FREQUENCY OPERATION SPECIFIED TURN ON SWITCHING CHARACTERISTICS TYPICAL TOTAL LOSSES: 3.5 W (IFpeak = 6 A, F = 56 kHz) SUITABLE WITH BUH TRANSISTORS SERIES SMD PACKAGE A NC D2PAK DESCRIPTION High voltage diode especially designed for horizontal deflection stage in standard and high resolution displays for TV’s and monitors. This device is packaged in D2PAK. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 15 A IF(RMS) RMS forward current VRRM Repetitive Peak Reverse Voltage 1500 V VRWM Reverse Working Voltage 1350 V IF(AV) Average forward current Tc=130°C 6 A IFSM Surge Non Repetitive Forward Current tp = 10ms sinusoidal 100 A Tstg Storage Temperature - 40 to 150 °C Tj δ = 0.5 Maximum Operating JunctionTtemperature November 1997 - Ed: 2 150 1/6 DTV32G-1500B THERMAL RESISTANCE Symbol Rth(j-c) Parameter Value Unit 2 °C/W Junction to Case STATIC ELECTRICAL CHARACTERISTICS Symbol IR VF * ** Test Conditions VR = VRWM IF =6A Min Typ Max Unit Tj = 25°C 200 µA Tj = 100°C 1 mA Tj = 25°C 1.5 V Tj = 100°C 1.4 pulse test : * tp = 5 ms , δ < 2% ** tp = 380 µs, δ < 2% RECOVERY CHARACTERISTICS Symbol trr (1) trr Test Conditions Tj = 25°C Tj = 25°C Min Typ IF = 1 A dIF/dt = -50A/µs VR =30V IF = 1 A dIF/dt = -15A/µs VR =30V 250 IF = 1 A 140 IR = 100mA Max Unit 175 ns ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr (2) VFp (2) Test Conditions Tj = 100°C IF = 6 A VFR = 2 V dIF/dt = 80 A/µs (1) Test following JEDEC standard (2) Test representativeof the application To evaluate the maximum conduction losses use the following equation : VF = 1.2 + 0.034 IF P = 1.2 x IF(av) + 0.034 x IF2(RMS) 2/6 Min Typ Max Unit 0.6 µs 39 V DTV32G-1500B Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor. =0.5 T =tp/T tp T =tp/T Fig. 3: Average temperature. current tp versus ambient Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values). IM =0.5 =0.5 =tp/T T tp Fig. 5: Relative variation of thermal transient impedance junction to case versus pulse duration. =0.5 =tp/T Fig. 6: Forward voltage drop versus forward current (maximum values). T tp 3/6 DTV32G-1500B Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Fig. 8: Recovery charge versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. ; Fig. 11: Recovery time versus dIF/dt. Fig. 12: Peak forward voltage versus dIF/dt. 4/6 DTV32G-1500B BASIC HORIZONTAL DEFLECTION CIRCUIT +V TRANSFORMER EHT LINE YOKE L D T C (BUH715) (D=DAMPER DIODE DTV32-1500) BASIC E-W DIODE MODULATOR CIRCUIT +V TRANSFORMER EHT C1 T LINE YOKE D1 (BUH715) C2 L D2 D1=DTV32-1500 D2=BYT08-400 5/6 DTV32G-1500B PACKAGE DATA D2PAK DIMENSIONS REF. Min. A E C2 L2 D L L3 A1 B2 B Millimeters Typ. Inches Max. Min. Typ. Max. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.25 1.40 0.049 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 9.00 9.35 0.354 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.37 0.050 0.054 L3 1.40 1.75 0.055 0.069 R C G A2 2.0 MIN. FLAT ZONE V2 R V2 0.40 0° 0.016 8° 0° 8° Marking: DTV32G-1500B Cooling method : C. Weight : 1.8 g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Micr oelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lif esupport devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6