STMICROELECTRONICS EMIF03

EMIF03-SIM01F2
®
3 LINES EMI FILTER
INCLUDING ESD PROTECTION
IPAD™
MAIN PRODUCT APPLICATIONS:
EMI filtering and ESD protection for:
■ SIM Interface (Subscriber Identify Module)
■ UIM Interface (Universal Identify Module)
DESCRIPTION
The EMIF03-SIM01F2 is a highly integrated
devices designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic interferences. The EMIF03 flip chip packaging means the
package size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.
BENEFITS
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ Lead free package
■ Very low PCB space consuming:
1.42mm x 1.42mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration & wafer level packaging.
Flip-Chip
(8 Bumps)
Table 1: Order Code
Part Number
EMIF03-SIM01F2
Marking
FC
Figure 1: Pin Configuration (Ball side)
3
2
1
RST
in
RST
out
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
15kV (air discharge)
8kV (contact discharge)
CLT
in
Gnd
CLT
out
B
MIL STD 883E - Method 3015-6 Class 3
Data
in
VCC
Data
out
C
A
Figure 2: Configuration
VCC
100 Ω
RST in
RST out
R1
47 Ω
CLK in
CLK out
R2
100 Ω
Data out
Data in
R3
Cline = 35pF max.
GND
TM: IPAD is a trademark of STMicroelectronics.
December 2004
REV. 2
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EMIF03-SIM01F2
Table 2: Absolute Ratings (limiting values)
Symbol
Tj
Parameter and test conditions
Value
Unit
125
°C
Maximum junction temperature
Top
Operating temperature range
- 40 to + 85
°C
Tstg
Storage temperature range
- 55 to + 150
°C
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
I
IF
Dynamic impedance
IPP
Peak pulse current
RI/O
Series resistance between Input &
Output
Cline
Input capacitance per line
IRM
V
IRM
IR
Rd
Symbol
VBR
VF
VCL VBR VRM
IPP
Test conditions
Min.
IR = 1 mA
Typ.
Max.
6
V
VRM = 3V per line
1
Rd
Unit
µA
Ω
1.5
R1
95
100
105
Ω
R2
44.65
47
49.35
Ω
R3
95
100
105
Ω
35
pF
Cline
@ 0V
Figure 3: S21 (dB) attenuation measurement
Figure 4: Analog crosstalk measurements
Aplac 7.60 User: STMicroelectronics Feb 22 2001
0.00
dB
-5.00
dB
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
100.0k
1.0M
10.0M
100.0M
1.0G
f/Hz
B3_B1(CLK)
2/7
A3_A2(RST)
C3_C1(DAT)
MHz
EMIF03-SIM01F2
Figure 5: Digital crosstalk measurement
Figure 6: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
V(in1)
V(out1)
Figure 7: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 8: Line capacitance versus applied
voltage (typical)
V(in1)
C(pF)
35
F=1MHz
Vosc=30mV
Tj=25°C
30
25
20
V(out1)
15
VR(V)
10
0
1
2
3
4
5
6
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EMIF03-SIM01F2
Figure 9: Aplac model
Rseries
Port2
50
Port1
50
MODEL = demif03
sub
MODEL = demif03
sub
DEMIF03 diodes Model
- RS = 1.2
- CJO = 17p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
Vcc
50p
0.05
MODEL = demif03_Vcc
0.08nH
0.1
4/7
Rseries = 47R (CLK line)
= 100R (RST & Data lines)
sub
DEMIF03_Vcc diode Model
- RS = 1.5
- CJO = 20p
- M = 0.3333
- VJ = 0.6
- ISR = 100p
- BV = 6.8
- IBV = 1m
- TT = 100n
EMIF03-SIM01F2
Figure 10: Ordering Information Scheme
EMIF
yy
-
xxx zz
Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
= 3: Leadfree Pitch = 400µm, Bump = 250µm
Figure 11: FLIP-CHIP Package Mechanical Data
500µm ± 50
650µm ± 65
1.42mm ± 50µm
500µm ± 50
315µm ± 50
1.42mm ± 50µm
Figure 12: Foot print recommendations
Figure 13: Marking
365
240
365
Copper pad Diameter :
250µm recommended , 300µm max
Dot, ST logo
xx = marking
z = packaging
location
yww = datecode
(y = year
ww = week)
E
Solder stencil opening : 330µm
x x z
y ww
40
220
Solder mask opening recommendation :
340µm min for 315µm copper pad diameter
All dimensions in µm
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EMIF03-SIM01F2
Figure 14: FLIP-CHIP Tape and Reel Specification
Dot identifying Pin A1 location
1.75 +/- 0.1
Ø 1.5 +/- 0.1
4 +/- 0.1
3.5 +/- 0.1
ST E
xxz
yww
ST E
xxz
yww
ST E
xxz
yww
8 +/- 0.3
0.73 +/- 0.05
4 +/- 0.1
User direction of unreeling
All dimensions in mm
Table 4: Ordering Information
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
EMIF03-SIM01F2
FC
Flip-Chip
2.9 mg
5000
Tape & reel 7”
Note: More informations are available in the application notes:
AN1235: “Flip-Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
Table 5: Revision History
6/7
Date
Revision
Description of Changes
08-Oct-2004
1
First issue
13-Dec-2204
2
Table 4 on page 6: Flip-Chip weight corrected from 3.3 mg
to 2.9 mg.
EMIF03-SIM01F2
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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