EMIF10-1K010F2 ® EMI FILTER INCLUDING ESD PROTECTION IPAD™ MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required ■ Mobile phones and communication systems ■ Computers, printers and MCU Boards DESCRIPTION The EMIF10-1K010F2 is a highly integrated devices designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interferences. The EMIF10 flip chip packaging means the package size is equal to the die size. This filter includes an ESD protection circuitry which prevents the device from destruction when subjected to ESD surges up 15kV. Flip-Chip (24 Bumps) Table 1: Order Code Part Number EMIF10-1K010F2 BENEFITS ■ ■ ■ ■ ■ ■ ■ ■ EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead free package Very low PCB space consuming: 2.57 mm x 2.57 mm Very thin package: 0.65 mm High efficiency in ESD suppression High reliability offered by monolithic integration High reducing of parasitic elements through integration & wafer level packaging. Marking FD Figure 1: Pin Configuration (ball side) COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 Level 4 15kV (air discharge) 8kV (contact discharge) 5 4 3 2 I7 GND GND I3 I9 GND GND I5 I1 B I10 I8 I6 I4 I2 C 09 07 05 03 01 D 010 08 06 04 02 E 1 A MIL STD 883E -Method 3015-6 Class 3 Figure 2: Basic Cell Configuration Low-pass Filter Output Input Ri/o = 1kΩ Cline = 100pF GND GND GND TM: IPAD is a trademark of STMicroelectronics. October 2004 REV. 1 1/7 EMIF10-1K010F2 Table 2: Absolute Maximum Ratings (Tamb = 25°C) Symbol Parameter and test conditions Tj Junction temperature Value Unit 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameters I VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cin VCL VBR VRM V IRM IR IPP Input capacitance per line Symbol Test conditions VBR IR = 1 mA IRM VRM = 3V per line RI/O Rline At 0V bias Figure 3: S21 (dB) attenuation measurement and Aplac simulation Min. Typ. Max. Unit 6 8 10 V 500 nA 900 1000 1100 Ω 80 100 120 pF Figure 4: Analog crosstalk measurements 0 0.00 dB - 5.00 Aplac -20 - 10.00 Measure - 15.00 -40 - 20.00 - 25.00 -60 - 30.00 - 35.00 -80 - 40.00 - 45.00 -100 - 50.00 1.0M 3.0M 10.0M 30.0M f/Hz 2/7 100.0M 300.0M 1.0G 1 10 100 frequency (MHz) 1,000 EMIF10-1K010F2 Figure 5: Digital crosstalk measurement Figure 6: ESD response to IEC61000-4-2 (+15kV air disc.harge) on one input V(in) and on one output (Vout) V(in1) VG1 V(out1) β2 1VG1 Figure 7: ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output (Vout) Figure 8: Line capacitance versus applied voltage C(pF) V(in1) V(out1) 100 90 80 70 60 50 40 30 20 10 0 F=1MHz Vosc=30mV VR(V) 1 2 5 10 3/7 EMIF10-1K010F2 Figure 9: Aplac model single line structure GNDi Rs Ls 50pH 50m 50pH Ii 50m + + Port15 - 50 Ls Rs Oi + cap_line Lbump Port16 50 cap_line Rbump Rgnd Lgnd Rgnd Lgnd Rgnd Lgnd Rseries Oi Ii Ii Rgnd Lgnd Csubump Rsubump + Rsub MODEL = demif10 Lhole + sub GNDi MODEL = demif10 Oi Csubump Rsubump + sub Figure 10: Aplac model parameters Cz Rseries cap_line Ls Rbump Lbump Rs Csubump Rsubump Rsub lhole Rhole cap_hole Rgnd Ignd 4/7 57pF 960 0.8pF 0.6nH 50m 50pH 0.15 15pF 0.15 0.1 1.2nH opt 0.15 0.15pF 0.25 0.4nH Model demif10 BV = 7 IBV = 1m CJO = Cz M = 0.3333 Rs = 1 VJ = 0.6 TT = 100n cap_hole Rhole EMIF10-1K010F2 Figure 11: Ordering Information Scheme EMIF yy - xxx zz Fx EMI Filter Number of lines Information x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version Package F = Flip-Chip x = 1: 500µm, Bump = 315µm = 2: Leadfree Pitch = 500µm, Bump = 315µm = 3: Leadfree Pitch = 400µm, Bump = 250µm Figure 12: FLIP-CHIP Package Mechanical Data 650µm ± 65 315µm ± 50 2.57mm ± 50µm 500µm ± 50 500µm ± 50 2.57mm ± 50µm Figure 13: Foot print recommendations 250µm ± 40 Figure 14: Marking 545 Solder stencil opening : 330µm 400 545 Copper pad Diameter : 250µm recommended , 300µm max Dot, ST logo xx = marking z = packaging location yww = datecode (y = year ww = week) E 230 x x z y ww 100 Solder mask opening recommendation : 340µm min for 315µm copper pad diameter All dimensions in µm 5/7 EMIF10-1K010F2 Figure 15: FLIP-CHIP Tape and Reel Specification Dot identifying Pin A1 location 1.75 +/- 0.1 Ø 1.5 +/- 0.1 4 +/- 0.1 3.5 +/- 0.1 ST E E xxz yww ST E xxz yww ST xxz yww 8 +/- 0.3 0.73 +/- 0.05 4 +/- 0.1 User direction of unreeling All dimensions in mm Table 4: Ordering Information Ordering code Marking Package Weight Base qty Delivery mode EMIF010-1K010F2 FD Flip-Chip 9.2 mg 5000 Tape & reel 7” Note: More informations are available in the application notes: AN1235: “Flip-Chip: Package description and recommendations for use” AN1751: "EMI Filters: Recommendations and measurements" Table 5: Revision History 6/7 Date Revision 12-Oct-2004 1 Description of Changes First issue EMIF10-1K010F2 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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