ESM6045AV NPN DARLINGTON POWER MODULE ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT ■ ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV Parameter Collector-Emitter Voltage (VBE = -5 V) VCEO(sus) Collector-Emitter Voltage (IB = 0) Unit 1000 V 450 V 7 V IC Collector Current 72 A ICM Collector Peak Current (t p = 10 ms) 108 A 8 A VEBO IB Emitter-Base Voltage (I C = 0) Value Base Current I BM Base Peak Current (t p = 10 ms) 16 A Pt ot Tot al Dissipation at T c = 25 o C 250 W T stg Storage Temperature Tj VI SO -55 to 150 o C Max. Ope rating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 o C September 1997 1/7 ESM6045AV THERMAL DATA R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.5 o C/W Max 0.05 o C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER # Collecto r Cut-of f Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV T j = 100 o C 1. 5 22 mA mA I CEV # Collecto r Cut-of f Current (VBE = -5) VCE = VCEV VCE = VCEV T j = 100 o C 1 15 mA mA I EBO # Emitter Cut-off Current VEB = 5 V (I C = 0) 1 mA VCEO(SUS) * Collecto r-Emitter Sustaining Voltage hFE ∗ V CE(sat )∗ VBE( sat) ∗ diC /dt I C = 0.2 A L = 25 mH Vc lamp = 450 V DC Current Gain I C = 60 A VCE = 5 V Collecto r-Emitter Saturation Voltage IC IC IC IC IB IB IB IB = = = = 50 50 60 60 A A A A = = = = 450 V 150 1A 1A 2.4 A 2.4 A T j = 100 oC 1.2 1.6 1.3 1.55 IB = 2.4 A IB = 2.4 A T j = 100 oC 2.1 2.15 Tj = 100 o C Base-Emitter Saturation Voltage I C = 60 A I C = 60 A Rate of Rise of On-state Collector VCC = 300 V RC = 0 tp = 3 µs I B1 = 3.6 A Tj = 100 o C 450 2 V V V V 3 V V 2 500 A/µs VCE (3 µs)•• Collecto r-Emitter Dynamic Voltage VCC = 300 V R C = 5 Ω I B1 = 3.6 A T j = 100 o C 4 7 V V CE (5 µs)•• Collector-Emitte r Dynamic Voltage VCC = 300 V R C = 5 Ω I B1 = 3.6 A T j = 100 o C 2.5 4 V Storage Time Fall Time Cross-over Time I C = 60 A VCC = 50 V VBB = -5 V R BB = 0.3 Ω Vc lamp = 450 V I B1 = 2.4 A L = 0. 04 mH T j = 100 o C 4.6 0.4 1.2 6 0. 6 2 µs µs µs Maximum Collector Emitter Voltage With ou t Snubber I CW off = 72 A I B1 = 2.4 A VBB = -5 V VCC = 50 V L = 35 µH RBB = 0.3 Ω T j = 125 o C ts tf tc VCEW ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % # See test circuits in databook introduction 2/7 450 V ESM6045AV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7 ESM6045AV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7 ESM6045AV Dc Current Gain Turn-on Switching Test Circuit Turn-on Switching Waveforms Turn-off Switching Test Circuit Turn-off Switching Waveforms 5/7 ESM6045AV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O H J C K L M 6/7 F E D N ESM6045AV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 7/7