FAIRCHILD FQU11P06_09

QFET
®
FQD11P06 / FQU11P06
60V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
•
•
•
•
•
•
-9.4A, -60V, RDS(on) = 0.185Ω @VGS = -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
• RoHS Compliant
S
!
D
●
●
G!
▶ ▲
G
S
●
I-PAK
D-PAK
FQD Series
FQU Series
G D S
!
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQD11P06 / FQU11P06
-60
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
dv/dt
PD
- Pulsed
TL
-9.4
A
-5.95
A
-37.6
A
± 30
V
(Note 2)
160
mJ
(Note 1)
-9.4
A
(Note 1)
3.8
-7.0
2.5
mJ
V/ns
W
38
0.3
-55 to +150
W
W/°C
°C
300
°C
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
Units
V
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
3.28
Units
°C/W
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
FQD11P06 / FQU11P06
January 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-60
--
--
V
--
-0.07
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = -60 V, VGS = 0 V
--
--
-1
µA
VDS = -48 V, TC = 125°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -4.7 A
--
0.15
0.185
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -4.7 A
--
4.9
--
S
--
420
550
pF
--
195
250
pF
--
45
60
pF
--
6.5
25
ns
--
40
90
ns
--
15
40
ns
--
45
100
ns
--
13
17
nC
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
(Note 4, 5)
VDS = -48 V, ID = -11.4 A,
VGS = -10 V
(Note 4, 5)
--
2.0
--
nC
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-9.4
A
ISM
--
--
-37.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -9.4 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.4 A,
dIF / dt = 100 A/µs
(Note 4)
--
83
--
ns
--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Rev. C6,January 2009
FQD11P06 / FQU11P06
Elerical Characteristics
FQD11P06 / FQU11P06
Typical Characteristics
VGS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
Top :
-ID, Drain Current [A]
1
10
-ID , Drain Current [A]
1
10
0
10
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = -30V
2. 250µ s Pulse Test
-1
-1
0
10
10
1
10
2
10
4
6
8
10
-VGS , Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
-IDR , Reverse Drain Current [A]
0.6
VGS = - 10V
0.4
VGS = - 20V
0.2
※ Note : TJ = 25℃
0.0
10
0
10
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
150℃
20
30
40
10
50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Capacitance [pF]
1
10
-1
0
800
Coss
Ciss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
600
400
Crss
200
0
-1
10
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2009 Fairchild Semiconductor Corporation
-VGS, Gate-Source Voltage [V]
RDS(on) [Ω],
Drain-Source On-Resistance
0.8
10
VDS = -30V
8
VDS = -48V
6
4
2
※ Note : ID = -11.4 A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. C6, January 2009
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQD11P06 / FQU11P06
Typical Characteristics
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -4.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
Operation in This Area
is Limited by R DS(on)
10
-ID, Drain Current [A]
-ID, Drain Current [A]
8
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
Rev. C5, October 2008
FQD11P06 / FQU11P06
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
VDD
VGS
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
©2009 Fairchild Semiconductor Corporation
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
Rev. C6, January 2009
(Continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
-BVDSS, (Normalized)
Drain-Source Breakdown Voltage
FQD11P06 / FQU11P06
Typical Characteristics
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -4.7 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
Operation in This Area
is Limited by R DS(on)
10
-ID, Drain Current [A]
-ID, Drain Current [A]
8
100 µs
1 ms
1
10
10 ms
DC
0
10
※ Notes :
6
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
Zθ JC(t), Thermal Response
75
100
125
150
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 3 .2 8 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009
TO-252 (DPAK) (FS PKG Code 36)
1:1
FQD11P06 / FQU11P06
Mechanical Dimensions
Scale 1:1 on letter size paper
Dimensions shown below are in:
millimeters
Part Weight per unit (gram): 0.33
©2009 Fairchild Semiconductor Corporation
Rev. C6, January 2009
FQD11P06 / FQU11P06
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
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instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
.
Rev. I37
©2009 Fairchild Semiconductor Corporation
Rev. C6. January 2009
FQD11P06 / FQU11P06
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