STW8NA60 STH8NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 8NA60 STH8NA60F I ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V 600 V <1 Ω <1 Ω 8 A 5 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 3 2 1 TO-247 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e ST W8NA60 V DS V DGR V GS 600 V Drain- gate Voltage (R GS = 20 kΩ) 600 V ± 30 V G ate-source Voltage o Drain Current (continuous) at Tc = 25 C ID o P tot V ISO Ts tg Tj STH8NA60FI Drain-source Voltage (VGS = 0) ID I DM (•) Unit 8 5 Drain Current (continuous) at Tc = 100 C 5.1 3.2 A Drain Current (pulsed) 32 32 A T otal Dissipation at Tc = 25 o C 150 60 W Derating Factor 1.2 0.48 W /o C Insulation W ithstand Voltage (DC) 4000 Storage Temperature Max. Operating Junction Temperature A V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1998 1/10 STW8NA60-STH8NA60FI THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max TO-247 ISOWATT 218 0.83 2.08 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value Unit 8 A 480 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 600 Unit V T c = 100 oC V GS = ± 30 V 25 250 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 4 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 0.92 1 Ω 8 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/10 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 4 A V GS = 0 Min. Typ. 4.5 6.6 1350 175 45 Max. Unit S 1690 230 60 pF pF pF STW8NA60-STH8NA60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 300 V I D = 4 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions 20 35 28 35 ns ns Turn-on Current Slope V DD = 480 V I D = 8 A VGS = 10 V R G = 47 Ω (see test circuit, figure 5) 200 Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V 58 9 27 82 nC nC nC Typ. Max. Unit 16 16 26 23 23 37 ns ns ns Typ. Max. Unit 8 32 A A 1.6 V ID = 8 A Min. VGS = 10 V A/µs SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 640 V I D = 8 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 600 ns 10 µC 33 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/10 STW8NA60-STH8NA60FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Derating Curve for TO-247 Derating Curve for ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW8NA60-STH8NA60FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STW8NA60-STH8NA60FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW8NA60-STH8NA60FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW8NA60-STH8NA60FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 8/10 STW8NA60-STH8NA60FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 9/10 STW8NA60-STH8NA60FI Information furnished is believed to be accurate and reliable. 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