KSH44H11 / KSH44H11I NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular KSE44H Fast Switching Speeds Low Collector-Emitter Saturation Voltage Applications • Switching Regulators • Converters • Power Amplifiers D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method KSH44H11TF KSH44H11 TO-252 3L (DPAK) Tape and Reel KSH44H11TM KSH44H11 TO-252 3L (DPAK) Tape and Reel KSH44H11ITU KSH44H11-I TO-251 3L (IPAK) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage Parameter 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A Collector Dissipation (TC = 25°C) 20.00 Collector Dissipation (TA = 25°C) 1.75 TJ Junction Temperature 150 °C TSTG Storage Temperature -65 to 150 °C PC © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.1.0 W www.fairchildsemi.com 1 KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor November 2013 Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions Collector-Emitter Sustaining Voltage(1) IC = 30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = 80 V, IB = 0 IEBO Emitter Cut-Off Current VCEO(sus) hFE DC Current Gain Min. Typ. 80 60 VCE = 1 V, IC = 4 A 40 Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A VBE(on) Base-Emitter Saturation Voltage IC = 8 A, IB = 0.8 A fT Unit V VBE = 5 V, IC = 0 VCE = 1 V, IC = 2 A VCE(sat) Max. 10 μA 50 μA 1 V 1.5 V Current Gain Bandwidth Product VCE = 10 A, IC = 0.5 A 50 MHz Cob Output Capacitance VCB = 10 V, f = 1 MHz 130 pF tON Turn-On Time 300 ns tSTG Storage Time IC = 5 A IB1 = -IB2 = - 0.5 A 500 ns 140 ns tF Fall Time Note: 1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.1.0 www.fairchildsemi.com 2 KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Electrical Characteristics 100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = 1V 100 10 ICP(max) 10 0μ s 50 0μ s 10 IC(max) 1m s 5m s DC 1 0.1 0.01 1 0.01 0.1 1 1 10 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC Current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.1.0 www.fairchildsemi.com 3 KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Physical Dimensions TO-252 3L Figure 4. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO252D03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO252D03.pdf. © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.1.0 www.fairchildsemi.com 4 KSH44H11 / KSH44H11I — NPN Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-251 3L D) TO251A03REVA. Figure 5. TO-251 (IPAK) MOLDED, 3-LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO251A03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO251A03.pdf. © 2002 Fairchild Semiconductor Corporation KSH44H11 / KSH44H11I Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® TinyBuck® TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor Corporation www.fairchildsemi.com