STMICROELECTRONICS HCC4517BF

HCC/HCF4517B
DUAL 64-STAGE STATIC SHIFT REGISTER
.
.
..
.
..
..
CLOCK FREQUENCY 12MHz (TYP.) AT VDD =
10V
SCHMITT TRIGGER CLOCK INPUTS ALLOW
OPERATION WITH VERY SLOW CLOCK RISE
AND FALL TIMES
THREE-STATE OUTPUTS
QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
STANDARDIZED, SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURREN OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Package)
C1
(Chip Carrier)
ORDER CODES :
HCC4517BF
HCF4517BM1
HCF4517BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4517B (extended temperature range) and
HCF4517B (intermediate temperature range) are
monolithic integrated circuits, available in 16-lead
dual in-line plastic or ceramic package.
The HCC/HCF4517B dual 64-stage static shift register consists of two independent registers each
having a clock, data, and write enable input and outputs accessible at taps following the 16th, 32nd,
48th, and 64th stages. These taps also serve as
input points allowing data to be inputted at the 17th,
33rd, and 49th stages when the write enable input
is a logic 1 and the clock goes through a low-to-high
transition. The truth table indicates how the clock
and write enable inputs control the operation of the
HCC/HCF4517B. Inputs at the intermediate taps
allow entry of 64 bits into the register with 16 clock
pulses. The 3-state outputs permit connection of this
device to an external bus.
September 1988
1/12
HCC/HCF4517B
FUNCTIONAL DIAGRAM (one half)
ABSOLUTE MAXIMUM RATINGS
Symbol
V DD*
Parameter
Supply Voltage : HC C Types
H C F Types
Value
Unit
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi
Input Voltage
– 0.5 to V DD + 0.5
V
II
DC Input Current (any one input)
± 10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T o p = Full Package-temperature Range
200
mW
100
mW
Pt ot
Top
Operating Temperature : HCC Types
H CF Types
– 55 to + 125
– 40 to + 85
°C
°C
Tstg
Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
* All voltages are with respect to VSS (GND).
RECOMMENDED OPERATING CONDITIONS
Symbol
V DD
VI
T op
2/12
Parameter
Supply Voltage : H CC Types
H C F Types
Input Voltage
Operating Temperature : HC C Types
H CF Types
Value
Unit
3 to 18
3 to 15
V
V
0 to V DD
V
– 55 to + 125
– 40 to + 85
°C
°C
HCC/HCF4517B
LOGIC DIAGRAM AND TRUTH TABLE
Clock
Write
Enable
D ata
Stage 1 6
T ap
Stage 3 2
Tap
Stage 4 8
Ta p
Stage 6 4
Ta p
0
0
X
Q16
Q32
Q48
Q64
0
1
X
Z
Z
Z
Z
1
0
X
Q16
Q32
Q48
Q64
1
1
X
Z
Z
Z
Z
/–
0
DI In
Q16
Q32
Q48
Q64
–
–/
–\
–
–\
–
1
Di In
D17 In
D33 In
D49 In
Z
0
X
Q16
Q32
Q48
Q64
1
X
Z
Z
Z
Z
–
3/12
HCC/HCF4517B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Symbol
IL
Parameter
Quiescent
Current
HCC
Types
HCF
Types
V OH
V OL
V IH
V IL
I OH
Output High
Voltage
Output Low
Voltage
Input High
Voltage
Input Low
Voltage
Output
Drive
Current
HCC
Types
HCF
Types
IOL
Output
Sink
Current
HCC
Types
HCF
Types
I IH, I IL
I O H, I OL
CI
Input
Leakage
Current
HCC
Types
HCF
Types
3-State
HCC
Output
Types
Leakage
HCF
Current
Types
Input Capacitance
Test Conditions
VO
|I O | V D D
T L o w*
(V)
(µA) (V) Min. Max.
0/ 5
5
5
0/10
10
10
0/15
15
20
0/20
20
100
0/ 5
5
20
0/10
10
40
0/15
15
80
0/ 5
< 1
5
4.95
0/10
< 1
10 9.95
0/15
< 1
15 14.95
5/0
< 1
5
0.05
10/0
< 1
10
0.05
15/0
< 1
15
0.05
0.5/4.5 < 1
5
3.5
1/9
< 1
10
7
1.5/13.5 < 1
15
11
4.5/0.5 < 1
5
1.5
9/1
< 1
10
3
13.5/1.5 < 1
15
4
0/ 5
2.5
5
–2
0/ 5
4.6
5 – 0.64
0/10
9.5
10 – 1.6
0/15
13.5
15 – 4.2
0/ 5
2.5
5 – 1.53
0/ 5
4.6
5 – 0.52
0/10
9.5
10 – 1.3
0/15
13.5
15 – 3.6
0/ 5
0.4
5
0.64
0/10
0.5
10
1.6
0/15
1.5
15
4.2
0/ 5
0.4
5
0.52
0/10
0.5
10
1.3
0/15
1.5
15
3.6
Value
25 °C
Min. Typ. Max.
0.04
5
0.04
10
0.04
20
0.08 100
0.04
20
0.04
40
0.04
80
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1
1.3
2.6
3.4
6.8
0.44
1
1.1
2.6
3.0
6.8
18
± 0.1
±10– 5 ± 0.1
0/15
15
± 0.3
±10
± 0.3
±1
0/18
18
± 0.4
±10– 4 ± 0.4
± 12
0/18
15
± 1.0
±10– 4 ± 1.0
± 7.5
VI
(V)
0/18
T Hi g h *
Min. Max.
150
300
600
3000
150
300
600
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
µA
V
V
V
V
mA
mA
±1
µA
Any Input
Any Input
Unit
5
–5
7.5
µA
pF
* TLo w = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V,
4/12
HCC/HCF4517B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, Input t r, tf = 20ns, C L = 50pF,
R L = 200kΩ)
Symbol
Parameter
t P HL , t P L H Propagation Delay Time :
CL to Bit 16 Tap
t PL Z , t P HZ 3-State Output WE to Bit 16 Tap
t PZ L , t P ZH (see note)
t THL , t T L H Output Transition Time
Test Conditions
Value
V D D (V) Min.
Typ.
Max.
5
200
400
10
110
220
15
90
180
5
75
150
10
40
80
15
30
60
5
100
200
10
50
100
40
80
15
t se t u p
t se t u p
Write Enable to Clock
Data to Clock
Write Enable to Clock
Release Time
t h o ld
tW
Data to Clock
Minimum Clock Pulse Width
5
– 100
– 50
10
– 50
– 25
15
– 30
– 15
5
– 100
– 50
10
– 60
– 30
15
– 30
– 15
t f , tr
Maximum Clock Input
Frequency
50
100
25
50
15
20
40
5
100
200
10
50
100
15
25
50
5
90
180
10
40
80
25
50
Maximum Clock Input Rise
or Fall Time
3
6
10
6
12
15
8
15
ns
ns
ns
5
5
ns
ns
10
15
f CL
Unit
ns
ns
ns
MHz
5
10
UNLIMITED
µs
15
Note : Measured at the point of 10% change in output load of 50pF, RL = 1kΩ to VDD for t PZL, tPLZ and RL = 1kΩ to VSS for tPHZ.
5/12
HCC/HCF4517B
WAVEFORMS
Output Low (sink) Current Characteristics.
Output High (source) Current Characteristics.
Typical Transition Time vs. Load Capacitance.
Typical Propagation Delay Time vs. Load Capacitance.
6/12
HCC/HCF4517B
Typical Dynamic Power Dissipation vs. Frequency.
Dynamic Power Dissipation and Waveforms.
TEST CIRCUITS
7/12
HCC/HCF4517B
TEST CIRCUITS (continued)
8/12
HCC/HCF4517B
Plastic DIP16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
9/12
HCC/HCF4517B
Ceramic DIP16/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7
0.276
D
E
3.3
0.130
0.38
e3
0.015
17.78
0.700
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
0.51
1.27
0.020
0.050
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053D
10/12
HCC/HCF4517B
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
11/12
HCC/HCF4517B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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