HCC4011B/12B/23B HCF4011B/12B/23B NAND GATES QUAD 2 INPUT HCC/HCF 4011B DUAL 4 INPUT HCC/HCF 4012B TRIPLE 3 INPUT HCC/HCF 4023B . .. . .. . PROPAGATION DELAY TIME = 60ns (typ.) AT CL = 50pF, VDD = 10V BUFFERED INPUTS AND OUTPUTS QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT 5V, 10V AND 15V PARAMETRIC RATINGS MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. EY (Plastic Package) M1 (Micro Package) F (Ceramic Frit Seal Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC40XXBF HCF40XXBM1 HCF40XXBEY HCF40XXBC1 The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. All inputs and outputs are buffered. PIN CONNECTIONS 4011B June 1989 4012B 4023B 1/12 HCC/HFC4011B/12B/23B ABSOLUTE MAXIMUM RATINGS Symbol V DD * Parameter Supply Voltage : HC C Types H CF Types Value Unit – 0.5 to + 20 – 0.5 to + 18 V V Vi Input Voltage – 0.5 to V DD + 0.5 V II DC Input Current (any one input) ± 10 mA Total Power Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range 200 mW 100 mW Pto t T op Operating Temperature : HCC Types H CF Types – 55 to + 125 – 40 to + 85 °C °C T stg Storage Temperature – 65 to + 150 °C Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage values are referred to VSS pin voltage. RECOMMENDED OPERATING CONDITIONS Symbol V DD VI T op 2/12 Parameter Supply Voltage : HC C Types H C F Types Input Voltage Operating Temperature : HC C Types H C F Types Value Unit 3 to 18 3 to 15 V V 0 to V DD V – 55 to + 125 – 40 to + 85 °C °C HCC/HCF4011B/12B/23B SCHEMATIC AND LOGIC DIAGRAMS 4011B 4012B 4023B 3/12 HCC/HFC4011B/12B/23B STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Symbol IL Parameter Quiescent Current VI (V) VO (V) |I O | V D D T L o w* 25 °C T Hi g h * (µA) (V) Min. Max. Min. Typ. Max. Min. Max. 0/5 5 0.25 HCC 0/10 Types 0/15 10 15 0/20 20 5 0/ 5 5 1 10 2 15 4 HCF 0/10 Types 0/15 V OH V OL V IH V IL I OH I OL Output High Voltage Output Low Voltage CI 0.01 0.5 15 1 0.01 1 30 0.02 5 150 0.01 1 7.5 0.01 2 15 0.01 4 30 0/10 <1 10 9.95 9.95 9.95 0/15 <1 15 14.95 14.95 14.95 4.95 4.95 <1 5 0.05 0.05 0.05 <1 10 0.05 0.05 0.05 15/0 <1 15 0.05 0.05 0.05 0.5/4.5 <1 5 3.5 3.5 3.5 1/9 <1 10 7 7 7 1.5/13.5 < 1 15 11 4.5/0.5 <1 5 1.5 1.5 1.5 9/1 <1 10 3 3 3 13.5/1.5 < 1 15 4 4 4 2.5 5 – 2 11 – 1.6 – 3.2 – 1.15 4.6 5 – 0.64 – 0.51 – 1 – 0.36 9.5 10 – 1.6 – 1.3 – 2.6 – 0.9 0/15 13.5 15 – 4.2 – 3.4 – 6.8 – 2.4 0/5 2.5 5 – 1.53 – 1.36 – 3.2 – 1.1 0/5 HCF Types 0/10 4.6 5 – 0.52 – 0.44 – 1 – 0.36 9.5 10 – 1.3 – 1.1 – 2.6 – 0.9 0/15 13.5 15 – 3.6 – 3.0 – 6.8 – 2.4 0/5 HCC 0/10 Types 0/15 0.4 5 0.64 0.51 1 0.36 0.5 10 1.6 1.3 2.6 0.9 1.5 15 4.2 3.4 6.8 2.4 0.4 5 0.52 0.44 1 0.36 0.5 10 1.3 1.1 2.6 0.9 1.5 15 3.6 6.8 2.4 HCC 0/18 Types Any Input mA ±10 – 5 ± 0.1 ± 1 15 ± 0.3 ±10 – 5 ± 0.3 ± 1 5 7.5 V mA ± 0.1 * TLOW = – 55°Cfor HCC device : – 40°C for HCF device. * THIGH = + 125°C for HCC device : + 85°C for HCF device. The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V with VDD = 15V. 4/12 V 18 Any Input HCF 0/15 Types 3.0 V 11 0/5 HCC Types 0/10 Input Capacitance V 5/0 0/5 µA 4.95 10/0 HCF 0/10 Types 0/15 Input Leakage Current 0.5 Unit 7.5 5 0/5 I IH , I IL 0.25 <1 Input Low Voltage Output Sink Current 0.01 0/5 Input High Voltage Output Drive Current Value µA pF HCC/HCF4011B/12B/23B DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, C L = 50pF, R L = 200kΩ, typical temperature coefficient for all VD D values is 0.3%/°C, all input rise and fall times = 20ns) Symbol Parameter t PL H, t P HL Propagation Delay Time t THL , t T L H Transition Time Test Conditions Value V D D (V) Min. Typ. Max. 5 125 250 10 60 120 15 45 90 5 100 200 10 50 100 15 40 80 Unit ns ns TEST CIRCUITS Quiescent Device Current. Noise Immunity. Input Leakage Current. 5/12 HCC/HFC4011B/12B/23B Minimum Output High (source) Current Characteristics. Minimum Output Low (sink) Current Characteristics. Typical Output High (source) Current Characteristics. Typical Output Low (sink) Current Characteristics. Typical Propagation Delay Time per Gate as a Function of Load Capacitance. Typical Transition Time vs. Load Capacitance. 6/12 HCC/HCF4011B/12B/23B Typical Voltage Transfer Characteristics. Typical Power Dissipation/gate vs Frequency. 7/12 HCC/HFC4011B/12B/23B Plastic DIP14 MECHANICAL DATA mm DIM. MIN. a1 0.51 B 1.39 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L Z 3.3 1.27 0.130 2.54 0.050 0.100 P001A 8/12 HCC/HCF4011B/12B/23B Ceramic DIP14/1 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 20 0.787 B 7.0 0.276 D E 3.3 0.130 0.38 e3 0.015 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N P Q 10.3 7.8 8.05 5.08 0.406 0.307 0.317 0.200 P053C 9/12 HCC/HFC4011B/12B/23B SO14 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.2 a2 MAX. 0.003 0.007 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45° (typ.) D 8.55 E 5.8 8.75 0.336 6.2 0.228 0.344 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M S 0.68 0.026 8° (max.) P013G 10/12 HCC/HCF4011B/12B/23B PLCC20 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A 11/12 HCC/HFC4011B/12B/23B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 12/12