IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTER ■ AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc) 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (•) P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 10 7 64 35 0.23 2000 -65 to 175 175 Unit V V V A A A W W/ o C V o C o C (•) Pulse width limited by safe operating area March 1998 1/5 IRF530FP THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 4.28 62.5 0.5 300 o Max Value Unit C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 16 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 25 V) 85 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage V GS = ± 20 V Current (V DS = 0) Typ. Max. 600 VGS = 0 I DSS Min. Unit V T c = 125 o C 1 10 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V GS(th) Gate Voltage R DS(on) Static Drain-source On V GS = 10V I D = 8 A Resistance ID(on) Threshold V DS = VGS On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.12 0.16 Ω 10 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance ReverseTransfer Capacitance V DS = 25 V f = 1 MHz ID = 8 A V GS = 0 Min. Typ. 5 8 950 150 50 Max. Unit S 1300 270 70 pF pF pF IRF530FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 50 V ID R G = 4.7 Ω V GS = 10 V Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V I D = 16 A Min. =8A V GS = 10 V Typ. Max. Unit 12 20 16 28 ns ns 32 9 13 44 nC nC nC Typ. Max. Unit 11 12 25 15 17 35 ns ns ns Typ. Max. Unit 16 64 A A 1.5 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 80 V I D = 16 A R G = 4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Time Reverse Charge Reverse Current Test Conditions I SD = 16 A Recovery I SD =16 A V DD = 30 V Recovery Recovery Min. VGS = 0 di/dt = 100 A/µs o T j = 150 C 150 ns 0.8 µC 10 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 IRF530FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 4/5 L4 IRF530FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5