L3100B L3100B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY IPP = 100A 10/1000 µs DESCRIPTION Dedicated to sensitive telecom equipment protection, this device can provide both voltage protection and current limitation with a very tight tolerance. Its high surge current capability makes the L3100B a reliable protection device for very exposed equipment, or when series resistors are very low. The breakdown voltage can be easily programmed by using an external zener diode. A multiple protection mode can also be performed when using several zener diodes, providing each line interface with an optimized protection level. The current limiting function is achieved with the use of a resistor between the gate N and the cathode. The value of the resistor will determine the level of the desired current. DIL 8 SCHEMATIC DIAGRAM Anode Gate N Gate P Cathode COMPLIESWITH THE FOLLOWING STANDARDS : CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 µs µs µs µs µs µs 1.5 38 2 50 1.5 38 kV A kV A kV A CONNECTION DIAGRAM Gate N 1 8 Anode NC 2 7 Anode Gate P 3 6 Anode Cathode 4 5 Anode TM: ASD is trademarks of SGS-THOMSON Microelectronics. September 1998 Ed : 3A 1/8 L3100B/L3100B1 ABSOLUTE MAXIMUM RATINGS ( T amb= 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 8/20 µs 100 250 A ITSM Non repetitive surge peak on-state current tp = 10 ms 50 A Tstg Tj Storage temperaturerange Maximum operating junction temperature - 40 to + 150 + 150 °C °C TL Maximum lead temperature for soldering during 10s 230 °C Value Unit 80 °C/W Note 1 : Pulse waveform 10/1000 µs % I PP 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) 2/8 Parameter Junction-to-ambient L3100B/L3100B1 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage IRM Reverseleakagecurrent VBR Breakdown voltage VBO Breakover voltage I Ipp IH Holding current IBO IBO Breakover current IH IPP Peak pulse current VGN Gate voltage IGN, IGP IRM Triggering gate current VRGN VRM V VBR VBO Reverse gate voltage Capacitance C OPERATION WITHOUT GATE IRM @ VRM VBR @ IR max. Type min. VBO @ IBO IH C max. min. max. min. max. note 1 note 2 note 1 µA V V mA V mA mA mA pF L3100B 6 40 60 250 265 1 350 200 500 280 100 L3100B1 6 40 60 250 255 1 350 200 500 210 100 OPERATION WITH GATES VGN @ IGN = 200 mA Type L3100B/B1 Note 1 : Note 2 : IGN @ VAC = 100V VRGN @ IG = 1mA IGP @ VAC = 100V min. max. min. max. min. max. V V mA mA V mA 0.6 1.8 30 200 0.7 150 See the reference test circuits for IH, IBO and VBO parameters. VR = 5 V, F = 1MHz. 3/8 L3100B/L3100B1 REFERENCE TEST CIRCUIT FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A R1 static relay. 140 R2 240 K 220V Vout IBO measure D.U.T V BO measure Transformer 220V/800V 5A TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST. R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functionaltest circuit. This test can be performedif the reference test circuit can’t be implemented. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back to the OFF-State within a durationof 50 ms max. 4/8 L3100B/L3100B1 Figure 1 : Surge peak current versus overload duration. 60 ITSM(A) Figure 2 : Relative variation of holding current versus junction temperature. 1.2 F=50Hz Tj initial=25°C 50 1.1 40 1.0 30 20 0.9 10 t(s) 0 1E-2 0.8 1E-1 1E+0 1E+1 1E+2 1E+3 0.7 0 Figure 3 : Relative variation of breakdown voltage versus ambient temperature. 10 20 30 40 50 60 70 Figure 4 : Junction capacitance versus reverse applied voltage. 100 1.04 1.03 80 1.02 60 1.01 40 1.00 20 0.99 0.98 0 10 20 30 40 50 60 70 0 1 10 100 5/8 L3100B/L3100B1 APPLICATION CIRCUIT Overvoltage Protection and Current limitation PTC HOOK + A SPEECH DIALING L3100B\B1 G N C RINGER Ra - RINGER Table below gives the tolerance of the limited current IT for each standardized resistor value. The formula (1) has been used with VGN values specified at the typical gate current level IGN. CURRENT TOLERANCE R Ω ( ± 5%) IT mA min IT mA max 3.00 3.30 3.60 3.90 4.30 4.70 5.10 5.60 6.20 6.80 7.50 8.20 9.10 10.10 11.00 12.00 13.00 15.00 16.00 18.00 20.00 22.00 24.00 27.00 30.00 268 246 228 213 196 181 170 158 145 135 152 117 108 101 95 90 85 78 75 70 66 62 60 56 54 533 503 478 456 433 413 396 379 361 347 333 322 310 299 291 283 277 266 263 256 250 245 242 237 233 6/8 - + L3100B VGN @ LOAD IGN Min. Max. Typ. V V mA 0.75 0.95 100 L3100B/L3100B1 Ground key telephone set Protection PROTECTION MODES : ON HOOK = Ringer circuit protection is ensured with breakdown voltage at 265 V. OFF HOOK = In dialing mode and in speech mode, the breakdown voltage of L3100B can be adapted to different levels with zener diodes. ORDER CODE L3100 B 1 VERSION. = VBR = 265 V 1 = VBR = 255 V MARKING : Logo, Date Code,part Number. 7/8 L3100B/L3100B1 PACKAGE MECHANICAL DATA. DIL 8 (Plastic) DIMENSIONS REF. Millimetres Inches Min. Typ. Max. Min. Typ. Max. I a1 B1 B b b1 L F e Z e3 D 8 1 E 5 a1 0.70 0.027 B B1 1.39 0.91 1.65 0.055 1.04 0.036 b b1 0.5 0.38 0.020 0.50 0.015 D 0.020 9.80 0.385 E e 8.8 2.54 0.346 0.100 e3 7.62 0.300 F I 4 0.065 0.041 7.1 4.8 L Z 3.3 0.44 0.280 0.189 0.130 1.60 0.017 0.063 Weight:0.59 g Packaging : Product supplied in antistatic tubes. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/8