ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT
General Description
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D²Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
Features
•
•
•
•
•
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Industry Standard D2-Pak package
SCIS Energy = 500mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Formerly Developmental Type 49443
Package
Symbol
COLLECTOR
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
JEDEC TO-262AA
EC
G
EC
G
R1
GATE
G
R2
E
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Ratings
390
Units
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
500
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
300
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
46
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
31
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
250
W
Power Dissipation Derating TC > 25°C
1.67
W/°C
TJ
TSTG
Operating Junction Temperature Range
-40 to 175
°C
Storage Junction Temperature Range
-40 to 175
°C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
°C
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
°C
ESD
Electrostatic Discharge Voltage at 100pF, 1500Ω
4
kV
TL
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
November 2009
Device Marking
V5036S
Device
ISL9V5036S3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800
V5036P
ISL9V5036P3
TO-220AA
Tube
N/A
50
V5036S
ISL9V5036S3
TO-262AA
Tube
N/A
50
V5036S
ISL9V5036S3S
TO-263AB
Tube
N/A
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330
360
390
V
BVCES
Collector to Emitter Breakdown Voltage
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
360
390
420
V
BVECS
Emitter to Collector Breakdown Voltage
IC = -75mA, VGE = 0V,
TC = 25°C
30
-
-
V
BVGES
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
ICER
IECS
Emitter to Collector Leakage Current
R1
Series Gate Resistance
R2
Gate to Emitter Resistance
±12
±14
-
V
TC = 25°C
-
-
25
µA
TC = 150°C
-
-
1
mA
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
1
mA
-
-
40
mA
-
75
-
Ω
10K
-
30K
Ω
On State Characteristics
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 10A,
VGE = 4.0V
TC = 25°C,
See Fig. 4
-
1.17
1.60
V
VCE(SAT)
Collector to Emitter Saturation Voltage
IC = 15A,
VGE = 4.5V
TC = 150°C
-
1.50
1.80
V
-
32
-
nC
TC = 25°C
1.3
-
2.2
V
TC = 150°C
0.75
-
1.8
V
-
3.0
-
V
Dynamic Characteristics
QG(ON)
Gate Charge
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
VGE(TH)
Gate to Emitter Threshold Voltage
IC = 1.0mA,
VCE = VGE,
See Fig. 10
VGEP
Gate to Emitter Plateau Voltage
IC = 10A,
VCE = 12V
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
0.7
4
µs
-
2.1
7
µs
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 12
-
10.8
15
µs
-
2.8
15
µs
TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
500
mJ
TO-263, TO-220, TO-262
-
-
0.6
°C/W
Thermal Characteristics
RθJC
Thermal Resistance Junction-Case
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Package Marking and Ordering Information
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
45
RG = 1KΩ, VGE = 5V,Vdd = 14V
40
35
30
TJ = 25°C
25
20
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
45
RG = 1KΩ, VGE = 5V,Vdd = 14V
40
35
30
25
20
TJ = 25°C
15
TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
0
0
0
50
100
150
200
250
300
350
0
2
4
tCLP, TIME IN CLAMP (µS)
1.10
ICE = 6A
1.05
VGE = 3.7V
VGE = 4.0V
1.00
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.90
0.85
-50
-25
0
25
50
75
100
10
125
150
1.25
ICE = 10A
1.20
VGE = 3.7V
1.10
VGE = 4.5V
VGE = 5.0V
1.05
VGE = 8.0V
1.00
-50
175
VGE = 4.0V
1.15
-25
0
TJ, JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
50
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
0.95
6
L, INDUCTANCE (mHy)
VGE = 8.0V
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = - 40°C
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
©2009 Fairchild Semiconductor Corporation
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 25°C
0
0
0
VGE = 8.0V
0
1.0
2.0
3.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics
50
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
40
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
0
1.0
2.0
3.0
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.5
1.0
4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
2.0
3.0
3.5
4.0
4.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
40
30
20
10
0
25
50
75
100
125
150
VCE = VGE
2.0
VGE = 4.0V
VTH, THRESHOLD VOLTAGE (V)
ICE, DC COLLECTOR CURRENT (A)
50
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
175
-50
0
-25
TC, CASE TEMPERATURE (°C)
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
20
10000
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Resistive tOFF
18
VECS = 24V
1000
16
SWITCHING TIME (µS)
LEAKAGE CURRENT (µA)
25
100
VCES = 300V
10
VCES = 250V
14
Inductive tOFF
12
10
8
6
1
Resistive tON
4
0.1
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics (Continued)
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Typical Characteristics (Continued)
3000
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
VGE, GATE TO EMITTER VOLTAGE (V)
FREQUENCY = 1 MHz
C, CAPACITANCE (pF)
2500
2000
CIES
1500
1000
CRES
500
COES
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0
5
10
15
20
0
25
0
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
50
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
360
TJ = - 40°C
BVCER, BREAKDOWN VOLTAGE (V)
ICER = 10mA
358
356
354
TJ = 175°C
352
TJ = 25°C
350
348
346
344
342
340
10
1000
100
2000
3000
RG, SERIES GATE RESISTANCE (kΩ)
ZthJC, NORMALIZED THERMAL RESPONSE
Figure 15. Breakdown Voltage vs Series Gate Resistance
100
0.5
0.2
10-1
0.1
0.05
t1
0.02
10-2
0.01
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
SINGLE PULSE
10-4
10-6
10-5
10-4
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
L
VCE
R
or
L
C
PULSE
GEN
LOAD
C
RG
RG = 1KΩ
DUT
G
+
DUT
G
VCE
-
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE
BVCES
tP
VCE
L
IAS
VDD
VARY tP TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
Figure 19. Energy Test Circuit
©2009 Fairchild Semiconductor Corporation
Figure 20. Energy Waveforms
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Test Circuits and Waveforms
th
JUNCTION
REV 1 May 2002
ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3
CTHERM1 th 6 4.0e2
CTHERM2 6 5 3.6e-3
CTHERM3 5 4 4.9e-2
CTHERM4 4 3 3.2e-1
CTHERM5 3 2 3.0e-1
CTHERM6 2 tl 1.6e-2
RTHERM1
CTHERM1
6
RTHERM1 th 6 1.0e-2
RTHERM2 6 5 1.4e-1
RTHERM3 5 4 1.0e-1
RTHERM4 4 3 9.0e-2
RTHERM5 3 2 9.4e-2
RTHERM6 2 tl 1.9e-2
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}
RTHERM3
CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
©2009 Fairchild Semiconductor Corporation
CASE
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
SPICE Thermal Model
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I43
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com