FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) D G TO-220 G DS FQP Series TO-220F GDS FQPF Series S Absolute Maximum Ratings Symbol Parameter FQP6N40CF FQPF6N40CF 400 Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 6 A EAR Repetitive Avalanche Energy (Note 1) 73 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Continuous (TC = 100°C) (Note 1) V 6 6* 3.6 3.6* A 24 24* A ± 30 V 270 mJ 20 V/ns 73 - Derate above 25°C A 0.58 38 W 0.3 W/°C -55 to +150 °C 300 °C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2012 Fairchild Semiconductor Corporation FQP6N40CF/FQPF6N40CF Rev.C0 1 FQP6N40CF FQPF6N40CF Units 1.71 3.31 °C/W 0.5 -- °C/W 62.5 62.5 °C/W www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February, 2012 Device Marking Device Package Reel Size Tape Width Quantity FQP6N40CF FQP6N40CF TO-220 - - 50 FQPF6N40CF FQPF6N40CF TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 400 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS/ ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.54 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 μA VDS = 320 V, TC = 125°C -- -- 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.9 1.1 Ω -- 4.7 -- S -- 480 625 pF -- 80 105 pF -- 15 20 pF -- 13 35 ns -- 65 140 ns -- 21 55 ns -- 38 85 ns -- 16 20 nC -- 2.3 -- nC -- 8.2 -- nC -- -- 6 A On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3 A gFS Forward Transconductance VDS = 40 V, ID = 3 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 6 A, RG = 25 Ω (Note 4, 5) VDS = 320 V, ID = 6 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 6 A, dIF / dt = 100 A/μs -- 70 -- ns -- 0.12 -- μC Qrr Reverse Recovery Charge (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQP6N40CF/FQPF6N40CF Rev.C0 2 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C 0 10 * Notes : 1. 250μs Pulse Test o 2. TC = 25 C -1 10 * Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 1 10 3.0 VGS = 10V 2.5 2.0 1.5 VGS = 20V 1.0 o * Note : TJ = 25 C 0.5 0 10 o 150 C 2. 250μs Pulse Test -1 0 5 10 15 10 20 0.2 0.4 0.6 ID, Drain Current [A] 1.2 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) VDS = 80V Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 10 800 Ciss 600 1.0 Figure 6. Gate Charge Characteristics 1200 1000 0.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitances [pF] * Notes : 1. VGS = 0V o 25 C Coss 400 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz 200 VDS = 200V 8 VDS = 320V 6 4 2 * Note : ID = 6A 0 -1 10 0 10 0 1 10 5 10 15 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQP6N40CF/FQPF6N40CF Rev.C0 0 3 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 μA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 3 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FQP6N40CF Figure 9-2. Maximum Safe Operating Area for FQPF6N40CF 2 10 10 10 μs 10 μs 10 ID, Drain Current [A] 100 μs 1 ID, Drain Current [A] Operation in This Area is Limited by R DS(on) 2 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms 0 10 DC -1 10 * Notes : o 1. TC = 25 C 1 10 1 ms 10 ms 100 ms 0 10 DC -1 10 * Notes : o 1. TC = 25 C o o 2. TJ = 150 C 2. TJ = 150 C 3. Single Pulse -2 10 100 μs 3. Single Pulse -2 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 6 ID, Drain Current [A] 5 4 3 2 1 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FQP6N40CF/FQPF6N40CF Rev.C0 4 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. ransient Thermal Response Curve for FQP6N40CF 0 D = 0 .5 0 .2 0 .1 10 * N o te s : 1 . Z θJC ( t) = 1 .7 1 0 .0 5 -1 PDM Z s in g le p u ls e t1 -2 10 -5 C /W M a x . 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 1 10 o 2 . D u ty F a c to r , D = t1 /t2 0 .0 2 θJC (t), Thermal Response 10 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF 0 0 .2 0 .1 * N o te s : 1 . Z θ J C ( t) = 3 .3 1 0 .0 5 10 C /W M a x . 3 . T JM - T C = P D M * Z θ JC ( t) 0 .0 2 0 .0 1 PDM Z s in g le p u ls e 10 o 2 . D u ty F a c to r , D = t1/t2 -1 θJC (t), Thermal Response D = 0 .5 10 t1 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQP6N40CF/FQPF6N40CF Rev.C0 5 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP6N40CF/FQPF6N40CF Rev.C0 6 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQP6N40CF/FQPF6N40CF Rev.C0 7 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FQP6N40CF/FQPF6N40CF Rev.C0 8 www.fairchildsemi.com (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FQP6N40CF/FQPF6N40CF Rev.C0 9 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Mechanical Dimensions tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FQP6N40CF/FQPF6N40CF Rev.C0 10 www.fairchildsemi.com FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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