STMICROELECTRONICS L9613

L9613B

DATA INTERFACE
OPERATING POWER SUPPLY VOLTAGE
RANGE 4.8V ≤ VS ≤ 36V (40V FOR TRANSIENTS)
REVERSE SUPPLY (BATTERY) PROTECTED DOWN TO VS ≥ -24V
STANDBY MODE WITH VERY LOW CURRENT
CONSUMPTION ISSB ≤ 1µA @ VCC ≤ 0.5V
MIN POSSIBLE BAUD RATE ACCORDING
TO ISO9141 ≥ 130KBAUD
TTL COMPATIBLE TX INPUT
BIDIRECTIONAL K-I/O PIN WITH SUPPLY
VOLTAGE DEPENDENT INPUT THRESHOLD
OVERTEMPERATURE SHUT DOWN FUNCTION SELECTIVE TO K-I/O PIN
WIDE INPUT AND OUTPUT VOLTAGE
RANGE -24V ≤ VK ≤ VS
K OUTPUTCURRENT LIMITATION,TYPIK= 60mA
DEFINED OFF OUTPUT STATUS IN UNDERVOLTAGE CONDITION AND VS OR GND INTERRUPTION
CONTROLLED OUTPUT SLOPE FOR LOW EMI
HIGH INPUT IMPEDANCE FOR OPEN VS
OR GND CONNECTION
SO8
ORDERING NUMBERS: L9613B013TR (TAPE&REEL)
L9613B (TUBES)
DEFINED OUTPUT ON STATUS OF LO OR
RX FOR OPEN LI OR K INPUTS
DEFINED K OUTPUT OFF FOR TX INPUT
OPEN
INTEGRATED PULL UP RESISTORS FOR
TX, RX AND LO
EMI ROBUSTNESS OPTIMIZED
DESCRIPTION
The L9613B is a monolithic integrated circuit containing medium speed data interface functions.
BLOCK DIAGRAM
VCC
VS
RTX
IK OFF
IK SC
TjMON
+
-
K
RLO
RRX
TX
1,75V
LI
ILI
+
RX
-
LO
+
GND
November 1999
1/10
L9613B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
-24 to +36
-24 to +40
V
V
VS
Supply Voltage
ISO transient t ≤ 400ms
VCC
Stabilized Voltage
-24V to 7
V
Supply Voltage Transient
-10 to +10
V/µs
dV S/dt
VLI,K
Pin voltage
-24 to VS
V
VLO, RX, TX
Pin voltage
-24 to VCC
V
* max ESD voltages are +/-2KV with human body model C=100pF, R=1.5KΩ corresponds to maximum energy
PIN CONNECTION
RX 1
8 LI
LO 2
7 VS
VCC 3
6 K
TX 4
5 GND
THERMAL DATA
Symbol
Parameter
Min.
TJSDon
Temperature shutdown switch-on-threshold
160
TJSDoff
Temperature shutdown switch-off-threshold
150
Rth(j-a)
Thermal steady state junction to ambient resistance
130
PIN FUNCTIONS
N.
Name
1
RX
Output for K as input
2
LO
Output L comparator
3
VCC
4
TX
5
GND
Common GND
6
K
Bidirectional I/O
7
VS
Supply voltage
8
LI
Input L comparator
2/10
Description
Stabilized voltage supply
Input for K as output
Typ.
Max.
Unit
200
°C
180
°C/W
°C
155
L9613B
ELECTRICAL CHARACTERISTICS (The electrical characteristics are valid within the below defined
Operating Conditions, unless otherwise specified).
The function is guaranteed by design until TJSDon temperature shutdown switch-on-threshold.
VS
Supply voltage 4.8 V... 18 V
VCC
Stabilized voltage 3 V... 7 V
TJ
Junction temperature -40 °C... 150°C
Symbol
ICC
Parameter
Supply VCC Current
Test Condition
Min.
VCC ≤ 5.5V
VLI, VTX = 0V
VK ≥ VKhigh
VLI ≥ VLIhigh
VTX = VCC
@ VCC ≤ 5.5V
ISON
Supply VS Current
ISSB
-5
Typ.
Max.
Unit
1.4
2.5
mA
40
150
µA
VLI, VTX = 0V
3.5
10
mA
VCC = 0.5V
@ VS ≤ 12V
<1
50
µA
100
µA
3)
VCC = 0.5V, see fig. 5
@ VS ≤ 16V
VKlow
Input Voltage LOW State
RX output status LOW
-24
0.40VS
V
VKhigh
Input Voltage HIGH State
RX output status HIGH
0.60VS
VS
V
VK hys
Input Threshold Hysteresis
VKhigh - VKlow
VS ≥ 8.0V
VS ≥ 6.0V
IKOFF
Input Current
VTX ≥ VTXhigh
VS, VCC ≥ 0V or VS,
VCC = open or GND = open
RKON
Output ON Impedance
@ VS ≥ 6.5V
VTX ≤ VTXlow IK ≥ 7mA
IKSC
Short Circuit Current
VS ≥ 6.5V
VK sat
Output Saturation Voltage
RKO = 1.5KΩ
0.2
0.08
0.05VS
1.0
V
V
-5
4
40
µA
10
30
Ω
60
150
mA
1
V
1)
40
VTXlow
Input Voltage
LOW State
-24
1
V
VTXhigh
Input Voltage
HIGH State
3.5
VCC
V
90
Ω
1
V
RRXON
RLOON
Output ON Impedance
VK ≤ VKlow; VLI ≤ VLIlow
VS ≥ 6.5V; IRX,LO ≥ 1mA
VRXsat
VLO sat
Saturation Output Voltage
No external load
IRXSC
ILOSC
Output short circuit current
VS ≥ 6.5V
40
9
20
50
mA
RTX
Input pull up resistance
Output status = (HIGH)
TA ≤ 85°C
-0.15V ≤ VLO ≤ VCC + 0.15V
-0.15V ≤ VRX ≤ VCC + 0.15V
5
10
18
kΩ
RTX
Input pull up resistance
10
20
40
kΩ
VLIlow
Input voltage LOW state
-0.15V ≤ VTX ≤ VCC + 0.15V
Tamb ≤ 125°C
LO output status LOW
VLIhigh
Input voltage HIGH state
LO output status HIGH
Input current
VS, VCC ≥ 0V or
VS, VCC = open or
GND = open
ILI
-24
0.40VS
V
0.60VS
VS
V
40
µA
-5
4
Note 1) For external supplied output currents lower than this value a series protection diode can become active. See also Fig. 4 and 5.
3/10
L9613B
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
20
Unit
CKI,LO,RX
Internal output capacities
fLI-LO
fK-RX
fTX-K
Transmission frequency
9V < VS < 16V,
(external loads)
Tmin ≥ 20 ⋅ RKO ⋅ CK - Kline
fLI-LO
fK-RX
fTX-K
Rise Time
for the definition of tr, tf see
FIG. 1,
2)
0.4
2
µs
Fall Time
9V < VS < 16V,
(external loads)
Tmin ≥ 20 ⋅ RKO ⋅ CK - Kline
for the definition of tr, tf see
FIG. 1
0.4
2
µs
1.3
3
µs
130
pF
kHz
tOFF,LI-LO
tOFF,K-RX
tOFF,TX-K
Switch OFF time
tON,LI-LO
tON,K-RX
tON,TX-K
Switch ON time
9V < VS < 16V,
(external loads)
Tmin ≥ 20 ⋅ RKO ⋅ CK - Kline
1.3
3
µs
tdSB ON
Standby reaction time
VTX = 0V, IK ≥ 7mA
VLI = 0V, 9V < VS < 16V
see FIG. 2
10
20
µs
20
40
µs
tdSB OFF
Note 2) Speed limitation related to external capacitance CextRX, LO and internal impedance CLO,RX , RLO, RRX for rise time.
tr = RLO,RX ⋅ (CLO,RX + Cext RX, LO) ⋅ 1.38.
Note 3) In case of spikes on VCC ≥ 0.5V KOUT will be switched On for typical 10µs which represents the standby tdSB reaction time.
FUNCTIONAL DESCRIPTION
The L9613B is a monolithic bus driver designed to provide bidirectional serial communication in automotive applications.
The device provides a bidirectional link, called K, to the VBat related diagnosis bus. It also includes a
separate comparator L which is also able to be linked to the VBat bus. The input TX and output RX of K
are related to VCC with her integrated pull up resistances. Also the L comparator output LO has a pull
up resistance connected to VCC.
All VBat bus defined inputs LI and K have supply voltage dependent thresholds together with sufficent
hysteresis to suppress line spikes. These pins are protected against overvoltages, shorts to GND and
VS and can also be driven beyond VS and GND. These features are also given for TX, RX and LI only
taking into account the behaviour of the internal pull up resistances. The thermal shut down function
switches OFF the K output if the chip temperature increases above the thermal shut down threshold. To
reactivate K again the chip temperature must decrease below the K switch ON temp. To achieve no fault
for VS undervoltage conditions the outputs will be switched OFF and stay at high impedance. The device is also protected against reverse battery condition. During lack of VS or GND all pins shows high
impedance characteristic. To realize a lack of the VS related bus line LI and K the outputs LO and RX
shows defined ON status. Supressing all 4 classes of ”Schaffner” signals (Schaffner 1; 2; 3a,b; 4) all
pins can be load with short energy pulses of max. ±0.2mJ. All these features together with a high possible baud rate >130Kbaud, controlled output slopes for low EMI, a wide power supply voltage range and
a real standby function with zero power consumption ISSB typ ≤ 1µA during system depowering VCC
≤0.5V make this device high efficient for automotive bus system.
After wake up of the system from SB condition the first output signal will have an additional delay time
tdtyp ≤ 5µs.
The typical output voltage behaviour for the K, LO, RX outputs as a function of the output current is
shown in Fig.5. Fig.6 shows a waveform of the output signal when the low level changes from RON ⋅ IOUT
to IOUT ⋅ 2 ⋅ RON + UBE state. This variation occurs due to too low output current or after a negative transient forced to the output or to the supply voltage line.
4/10
L9613B
Figure 1. Input to output timings and output pulse shape
VIN
t
VOUT
80%
80%
20%
20%
tr
tf
t OFF
t
t ON
Figure 2. Standby reaction time.
5V
VCC
0V
VK
80%
20%
VLO
td SB
ON
td SB
ON
td SB
OFF
VCC
80%
5/10
L9613B
Figure 3. Output characteristics at K, LO, RX.
I OUT
RD
SON
I OUT
MIN
V OUT = I OUT * R DSON
protection diode
V OUT = I OUT * 2 * R DSON + U BE
VOUT
1
Figure 4. Output signal shape related to output current.
VIN
t
VOUT
I OUT * 2 * R DSON + U BE
I OUT * R DSON
I OUT > I OUT
MIN
6/10
I OUT > I OUT
MIN
I OUT′< I OUT
MIN
t
L9613B
Figure 5. Standby current consumption.
R
≈
50
kΩ
IS SB
100µA
50µA
12V
16V
VS
Figure 6. Application Circuit.
VCC
VS
RTX
RLO
40 V
R
KO
510Ω
5V
IK SC
CK K
K
IK
OFF
TjMON
TX
+
-
VS
1,75V
Diagnostic
Tester
RX
-
I/O
I/O
+
LI
LO
-
L
ILI
VCC
uP
I/O
+
GND
VDD
L Line
ECU1
K Line
0.4Ω
RRX
K
CK
LI
ECU2
7/10
L9613B
EMS Performance (ISO 9141 BUS system)
Figure 7.
VS = 12V
=
510Ω
VS
50Ω
TX
K
Probe
U713
136Ω
40dB
Rhode & Schwartz
NAP - 73
SMG
10kHz
1.5nF
P imax = 5W
0.1 - 1000MHz
68Ω
VS
∆
RX
Pi
K
U713
NAP
Signal comparison
∆≤ ± 10%
Figure 8.
P i(mW)
not incident power resistant
10000
5000
incident power resistant
1000
100
1
10
ESD application hints
To improve the ESD robustness of this device
above specified ±2KV/HBM external blocking capacitors must be used. Nevertheless the max. energy which can be clamped by this device should
not exceeds 0.2mJ for each pin. An equivalent input diagram for calculation can be seen in fig. 9.
ESD duscharge model
1
1
EESD = CHBM U2ESD = 0.2mJ + CEXT ⋅ (45V)2
2
2
8/10
100
1000
f (MHz)
Figure 9.
R HBM
C HBM
100pF
1.5kΩ
C ext
45V
45V
E ≤ 0.2mJ
L9613B
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.25
a2
MAX.
0.069
0.004
0.010
1.65
0.065
a3
0.65
0.85
0.026
0.033
b
0.35
0.48
0.014
0.019
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.020
c1
45° (typ.)
D (1)
4.8
5.0
0.189
0.197
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F (1)
3.8
4.0
0.15
0.157
L
0.4
1.27
0.016
0.050
M
S
OUTLINE AND
MECHANICAL DATA
0.6
0.024
SO8
8 ° (max.)
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
9/10
L9613B
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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