FDMC8296 N-Channel Power Trench® MOSFET 30V, 18A, 8.0m: Features General Description Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Application DC - DC Buck Converter Notebook battery power management Load switch in Notebook Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 18 44 (Note 1a) 12 (Note 3) 72 -Pulsed A 52 Single Pulse Avalanche Energy EAS Ratings 30 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 27 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 4.6 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC8296 Device FDMC8296 ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 Package MLP 3.3X3.3 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET September 2010 Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V 17 mV/°C VDS = 24V, VGS = 0V, 1 TJ = 125°C 250 VGS = ±20V, VDS = 0V PA ±100 nA 3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250PA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.9 -6 mV/°C VGS = 10V, ID = 12A 6.5 8.0 VGS = 4.5V, ID = 10A 9.5 13.0 VGS = 10V, ID = 12A, TJ = 125°C 9.0 12.8 VDD = 5V, ID = 12A 44 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1038 1385 pF 513 685 pF 87 135 pF : 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 12A, VGS = 10V, RGEN = 6: 9 18 ns 3 10 ns 19 35 ns 2 10 ns VGS = 0V to 10V 16 23 nC VGS = 0V to 4.5V VDD = 15V, ID = 12A 7.6 10.6 nC 3 nC 2.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 12A (Note 2) VGS = 0V, IS = 1.9A (Note 2) IF = 12A, di/dt = 100A/Ps 0.82 1.3 0.73 1.2 V 25 45 ns 9 18 nC NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. b.125 °C/W when mounted on a minimum pad of 2 oz copper a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3.E AS of 72 mJ is based on starting T = 25 C, L = 1 mH, IAS = 12 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 5.7 A. ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 2 www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS = 10V ID, DRAIN CURRENT (A) 40 VGS = 4.5V VGS = 3.5V 30 VGS = 4V 20 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 10 VGS = 3V 0 0 1 2 3 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 5 VGS = 3V 4 VGS = 3.5V 3 VGS = 4V 1 VGS = 10V 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 50 50 ID = 12A VGS = 10V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 ID = 12A 30 20 TJ = 125oC 10 TJ = 25oC 0 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 IS, REVERSE DRAIN CURRENT (A) 50 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -50 20 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 1.6 VGS = 4.5V 2 VDS = 5V 30 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 3 1.2 www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 12A Ciss 8 1000 VDD = 10V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 20V 4 Coss 100 f = 1MHz VGS = 0V 2 0 0 3 6 9 12 15 30 0.1 18 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 30 IAS, AVALANCHE CURRENT(A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 40 VGS = 10V 30 VGS = 4.5V 20 10 Limited by Package 1 0.01 0.1 1 10 0 25 100 50 tAV, TIME IN AVALANCHE(ms) o RTJC = 4.6 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) Crss 10 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED 0.1 1s 10s o RTJA = 125 C/W DC o TA = 25 C 0.01 0.01 0.1 1 10 100 SINGLE PULSE RTJA = 125oC/W VGS = 10V TA = 25oC 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 100 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.01 0.005 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 5 www.fairchildsemi.com FDMC8296 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8296 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 6 www.fairchildsemi.com AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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