FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description • High Speed Switching Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications. • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder C G TO-264 3L G C E E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 1000 V VGES Gate to Emitter Voltage 25 V Collector Current @ TC = 25oC 60 A Collector Current @ TC = 100oC 42 A ICM (1) Pulsed Collector Current @ TC = 25oC 120 A IF Diode Continuous Forward Current @ TC = 100oC 15 A W IC PD o Maximum Power Dissipation @ TC = 25 C 180 Maximum Power Dissipation @ TC = 100oC 72 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) Parameter Ratings Thermal Resistance, Junction to Case RJC(Diode) Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient ©2000 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. C1 o C/W 2.08 o C/W 25 1 Unit 0.69 oC/W www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT November 2013 Part Number Top Mark FGL60N100BNTD FGL60N100BNTD Package Packing Method TO-264 Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1000 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA IC = 60 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.0 7.0 V IC =10 A, VGE = 15 V - 1.5 1.8 V IC = 60 A, VGE = 15 V, - 2.5 2.9 V - 6000 - pF VCE = 10 V, VGE = 0 V, f = 1MHz - 260 - pF - 200 - pF - 140 - ns - 320 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600 V, IC = 60 A, RG = 51 , VGE = 15 V, Inductive Load, TC = 25oC VCE = 600 V, IC = 60 A, VGE = 15 V, TC = 25oC Electrical Characteristics of the Diode Symbol VFM Parameter Diode Forward Voltage Test Conditions IF = 15 A trr Diode Reverse Recovery Time IF = 60 A, di/dt = 20 A/us IR Instantaneous VRRM = 1000 V FGL60N100BNTD Rev. C1 630 - ns 130 - ns - 275 - nC - 45 - nC - 95 - nC TC = 25°C unless otherwise noted IF = 60 A ©2000 Fairchild Semiconductor Corporation - 2 Min. Typ. Max Unit - 1.2 1.7 V - 1.8 2.1 V - 1.2 1.5 us - 0.05 2.0 uA www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 80 Collector Current, I C [A] 90 20V 15V 10V 9V Common Emitter TC = 25℃ 8V 70 60 40 7V 20 1 2 3 4 TC = 25℃ 60 TC = 125℃ 50 40 30 20 10 VGE = 6V 0 0 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 80 Collector Current, I C [A] 100 Figure 2. Typical Saturation Voltage Characteristics 0 5 0 Collector-Emitter Voltage, VCE [V] 1 2 3 4 Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 4. Saturation Voltage vs. VGE 10 Common Emitter O T C= - 40 C 3 Collector-Emitter Voltage, VCE[V] Collector-Emitter Voltage, VCE [V] Common Emitter VGE=15V 80A 60A 2 30A IC=10A 1 -50 0 50 100 8 6 IC=10A 0 150 4 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 10 8 6 30A 60A 80A 2 IC = 10A 0 8 12 16 FGL60N100BNTD Rev. C1 16 20 Common Emitter TC = 125℃ 8 30A 6 60A 80A 4 2 IC = 10A 0 20 4 Gate-Emitter Voltage, VGE [V] ©2000 Fairchild Semiconductor Corporation 12 Figure 6. Saturation Voltage vs. VGE Common Emitter TC = 25℃ 4 8 Gate-Emitter Voltage, V GE [V] Figure 5. Saturation Voltage vs. VGE 4 60A 80A 2 Case Temperature, TC [℃] 10 30A 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] 3 www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Switching Loss vs. Gate Resistance 10000 VCC=600V, IC=60A 10000 VGE=? 5V Cies o Switching Time [ns] Capacitance [pF] T C=25 C 1000 Coes 100 Cres Tdoff 1000 Tr Tdon Tf 100 Common Emitter VGE = 0V, f = 1MHz T C = 25℃ 0 5 10 15 20 25 10 30 0 Collector-Emitter Voltage, VCE [V] 50 Figure 9. Switching Characteristics vs. Collector Current 20 200 Common Emitter VCC=600V, RL=10 Ω TC=25 ℃ Gate-Emitter Voltage,VGE [V] V CC =600V, Rg=51Ω V GE =± 15V, TC =25 ℃ Switching Time [ns] 150 Figure 10. Gate Charge Characteristics 1000 Tdoff Tf Tr 100 100 Gate Resistance, RG [? ] Tdon 15 10 5 0 10 20 30 40 50 0 60 50 100 150 200 250 300 Gate Charge, Qg [nC] Collector Current, I C [A] Figure 11. SOA Characteristics Figure 12. Forward Characteristics 100 IC MAX. (Pulsed) IC MAX. (Continuous) 50us Forward Current, IF[A] Collector Current , I C [A] 100 100us 10 1ms DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curve must be darated linearly with increase in temperature 10 100 FGL60N100BNTD Rev. C1 1 0.0 1000 Collector-Emitter Voltage, V CE [V] ©2000 Fairchild Semiconductor Corporation TC = 25 ℃ 0.1 0.1 1 TC = 100 ℃ 10 0.5 1.0 1.5 2.0 2.5 Forward Voltage, VFM [V] 4 www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT Typical Performance Characteristics Figure 13. Reverse Recovery Characteristics vs. di/dt 119 IF =60A 85 0.85 t rr 0.68 68 0.51 51 0.34 34 Irr 0.17 17 Reverse Recovery Time, trr [us] 102 1 .0 10 t rr 0 .8 8 I rr 0 .6 6 0 .4 4 0 0.00 0 40 80 120 160 200 240 10 20 di/dt [A/us] 30 40 50 Figure 16. Junction Capacitance 1000 250 100 TC = 150℃ Capacitance, Cj [pF] 1 0.1 T C= 25℃ 150 100 50 1E-3 0 T C = 25 ℃ 200 10 0.01 60 F o rw a rd C urre nt, IF [A ] Figure 15. Reverse Current vs. Reverse Voltage Reverse Current, IR [uA] 12 Reverse Recovery Current Irr [A] 1.02 d i/d t= -2 0 A /u s T C=25 ? 1 .2 T C =25? Reverse Recovery Current Irr [A] Reverse Recovery Time, trr [us] 1.19 Figure 14. Reverse Recovery Characteristics vs. Forward Current 300 600 0 900 0.1 1 10 100 Reverse Voltage, V R [V] Reverse Voltage, VR [V] Figure 17.Transient Thermal Impedance of IGBT 1 Thermal Response, Z THJC [℃/W] 1 0 0 .5 0 .2 0 .1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 0 .0 1 1 E -3 s in g le p u ls e 1 0 -4 1 0 -3 1 0 -2 R e c ta n g u la r P u ls e ©2000 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. C1 t2 5 1 0 -1 D u r a t io n 1 0 0 1 0 1 [s e c ] www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT Typical Performance Characteristics FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT Mechanical Dimensions Figure 18. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2000 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. C1 7 www.fairchildsemi.com FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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