LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % M265 epoxy sealed • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL STABILITY ORDER CODE LET19060C BRANDING LET19060C • BeO FREE PACKAGE • INTERNAL INPUT/OUTPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. 2 3 1. Drain 2. Source 3. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID PDISS Tj TSTG Drain Current 7 A Power Dissipation (@ Tc = 70 °C) 130 W Max. Operating Junction Temperature 200 °C -65 to +150 °C 1.0 °C/W Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance January, 24 2003 1/4 LET19060C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V ID = 10 µA IDSS VGS = 0 V VDS = 26 V 6 µA IGSS VGS = 5 V VDS = 0 V 1 µA 4.5 V 65 V VGS(Q) VDS = 26 V ID = TBD VDS(ON) VGS = 10 V ID = 2 A 0.27 V GFS VDS = 10 V ID = 2 A 4.7 mho CISS* VGS = 0 V VDS = 26 V f = 1 MHz TBD pF COSS* VGS = 0 V VDS = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF 2.5 * Includes Internal Matching Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB VDD = 26 V IDQ = TBD 70 75 W ηD(1) VDD = 26 V IDQ = TBD 45 50 % Load mismatch VDD = 26 V IDQ = TBD ALL PHASE ANGLES POUT = 60 W 10:1 VSWR DYNAMIC (f = 1930 - 1990 MHz) P1dB VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD VDD = 26 V IDQ = TBD ηD (1) POUT = 60 W 60 65 W 11 13 dB 40 45 % POUT(CDMA)(2) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 7.5 W ηD(CDMA)(2) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 18 % 60 65 W 11 13 dB DYNAMIC (f = 1805 - 1880 MHz) P1dB VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD ηD(1) VDD = 26 V IDQ = TBD POUT = 60 W POUT(EDGE) 400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 % ηD(EDGE) 400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 % (1) 1 dB Compression point (2) IS-97 CDMA 45 % 30 W 25 % Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/4 Class 2 M3 LET19060C M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. TYP. Inch MAX MIN. TYP. MAX A 12.57 12.83 .495 .505 B 4.32 5.33 .170 .210 C 9.65 9.91 .380 .390 D 19.61 20.02 .772 .788 E 33.91 34.16 1.335 1.345 F 0.08 0.15 .003 .006 G 0.89 1.14 .035 .045 H 1.45 1.70 .057 .067 I 3.18 4.32 .125 .170 J 9.27 9.53 .365 .375 K 27.69 28.19 1.090 1.110 L 3.00 3.51 .118 .138 Ref. 1023153 3/4 LET19060C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4