LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF = 17 % DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET20030S’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (straight lead) ORDER CODE LET20030S BRANDING LET20030S PIN CONNECTION SOURCE GATE DRAIN Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V Drain Current TBD A Power Dissipation 140 W ID PDISS Tj TSTG Max. Operating Junction Temperature Storage Temperature 165 °C -65 to +175 °C 1.0 °C/W THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance February, 27 2003 1/4 LET20030S ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol Test Conditions V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 26 V IGSS VGS = 5 V VGS(Q) VDS = 26 V ID = TBD VDS(ON) VGS = 10 V ID = 1 A Min. Typ. Max. 65 Unit V VDS = 0 V 2.5 1 µA 1 µA 5.0 V TBD V GFS VDS = 10 V ID = 1 A TBD mho CISS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF COSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2000 MHz) P1dB VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD POUT = 30 W 11 13 dB ηD VDD = 26 V IDQ = TBD POUT = 30 W 45 50 % IMD3(1) VDD = 26 V IDQ = TBD POUT = 30 W PEP Load mismatch IDQ = TBD VDD = 26 V ALL PHASE ANGLES 30 W -32 POUT = 30 W -28 dBc 10:1 VSWR DYNAMIC (f = 1930 - 1990 MHz) POUT (2) VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD VDD = 26 V IDQ = TBD ηD (2) 25 30 W POUT = 30 W 11 13 dB POUT = 30 W 40 45 % Pout(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 4.5 W ηD(CDMA)(3) 885 KHz < -47 dBc 1.25 MHz < -55 dBc 2.25 MHz < -55 dBc 17 % (1) f1 = 2000 MHz, f2 = 2000.1 MHz (2) 1 dB Compression point (3) IS-97 CDMA Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 2/4 LET20030S PowerSO-10RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 a MIN. 0.2 TYP. MAX 0.007 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 F 5.9 6.1 0.5 6.3 0.231 0.24 0.019 0.247 G 1.2 0.047 R1 R2 0.25 0.8 0.031 0.01 T1 6 deg 6 deg T2 10 deg 10 deg Note (1): Resin protrusions not included (max value: 0.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 3/4 LET20030S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4