LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21004’s superior linearity performance makes it an ideal solution for base station applications. ORDER CODE LET21004 BRANDING 21004 PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V 1 A TBD W ID PDISS Tj TSTG Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature 150 °C -65 to +150 °C TBD °C/W THERMAL DATA (TCASE = 70 °C) Rth(j-c) April, 15 2003 Junction -Case Thermal Resistance 1/4 LET21004 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol Test Conditions V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 26 V IGSS VGS = 5 V VGS(Q) VDS = 28 V ID = TBD VDS(ON) VGS = 10 V ID = 0.3 A Min. Typ. Max. 65 Unit V VDS = 0 V 2.5 TBD 1 µA 1 µA 5.0 V 0.3 V GFS VDS = 10 V ID = 0.3 A TBD mho CISS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF COSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 2170 MHz) Pout(1) ηD (1) Load mismatch VDD = 26 V IDQ = TBD 4 5 W VDD = 26 V IDQ = TBD 45 50 % VDD = 26 V IDQ = TBD ALL PHASE ANGLES POUT = 4 W 10:1 VSWR DYNAMIC (f = 2110 - 2170 MHz) Pout(1) VDD = 26 V IDQ = TBD 3 4 W ηD(1) VDD = 26 V IDQ = TBD 40 45 % GP VDD = 26 V IDQ = TBD 11 13 dB 1 W 25 % POUT(W-CDMA) ACPR: -45dBc ηD(W-CDMA) ACPR: -45dBc (1) 1 dB Compression point 2/4 POUT = 4 W LET21004 PowerFLAT™ MECHANICAL DATA DIM. mm MIN. TYP. Inch MAX MIN. TYP. MAX A 0.90 1.00 0.035 0.039 A1 A3 0.02 0.24 0.05 0.001 0.009 0.002 AA 0.15 0.25 0.35 0.006 0.01 0.014 b c 0.43 0.64 0.51 0.71 0.58 0.79 0.017 0.025 0.020 0.028 0.023 0.031 D 5.00 0.197 d 0.30 0.011 E E2 5.00 2.49 2.57 0.197 2.64 0.098 0.101 e f 1.27 3.37 g 0.74 0.03 h 0.21 0.008 0.104 0.050 0.132 3/4 LET21004 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4