LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING • ESD PROTECTION ORDER CODE LET8180 DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity. BRANDING LET8180 PIN CONNECTION 1 2 3 5 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V ID PDISS Tj TSTG Drain Current 18 A Power Dissipation (@ Tc =+70 °C) 289 W Max. Operating Junction Temperature 200 °C -65 to +150 °C 0.45 °C/W Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance January, 28 2003 1/4 LET8180 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V ID = 10 µA IDSS VGS = 0 V VDS = 32 V 10 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 32 V ID = TBD 4.5 V VDS(ON) VGS = 10 V ID = 3 A 0.45 V 65 V 2.5 0.28 GFS VDS = 10 V ID = 3 A CISS* VGS = 0 V VDS = 32 V f = 1 MHz COSS VGS = 0 V VDS = 32 V f = 1 MHz CRSS VGS = 0 V VDS = 32 V f = 1 MHz 2.6 mho TBD pF 70 2.5 pF pF * Includes Internal Input Moscap. Symbol Test Conditions Min. Typ. Max. Unit DYNAMIC (f = 860 MHz) POUT(1) VDD = 32 V IDQ = TBD 200 220 W ηD(1) VDD = 32 V IDQ = TBD 50 60 % GP(2) VDD = 32 V IDQ = TBD POUT = 200 W PEP 16 17 dB IMD3(2) VDD = 32 V IDQ = TBD POUT = 200 W PEP -31 dBc Load mismatch VDD = 32 V IDQ = TBD ALL PHASE ANGLES POUT = 200 W 10:1 VSWR DYNAMIC (f = 470 - 860 MHz) POUT(1) VDD = 32 V IDQ = TBD 180 W (1) VDD = 32 V IDQ = TBD 50 % GP(1) VDD = 32 V IDQ = TBD 14.5 dB ηD (1) 1 dB Compression point (2) f1 = 860 MHz, f2 = 860.1 MHz ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/4 Class 2 M3 LET8180 M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA mm DIM. A MIN. TYP. 8.13 B Inch MAX MIN. 8.64 .320 10.80 TYP. MAX .340 .425 C 3.00 3.30 .118 .130 D 9.65 9.91 .380 .390 E 2.16 2.92 .085 .115 F 21.97 22.23 .865 .875 G 27.94 1.100 H 33.91 34.16 1.335 1.345 I 0.10 0.15 .004 .006 J 1.52 1.78 .060 .070 K 2.36 2.74 .093 .108 L 4.57 5.33 .180 .210 M 9.96 10.34 .392 .407 N 21.64 22.05 .852 .868 Controlling dimension: Inches 1022783C 3/4 LET8180 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4