LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9006 DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity. BRANDING 9006 PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Value Unit V(BR)DSS Symbol Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V 1 A ID PDISS Tj TSTG Parameter Drain Current Power Dissipation (@ Tc = 70°C) 16 W Max. Operating Junction Temperature 150 °C -65 to +150 °C 5 °C/W Storage Temperature THERMAL DATA Rth(j-c) April, 15 2003 Junction -Case Thermal Resistance 1/4 LET9006 ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol Test Conditions V(BR)DSS VGS = 0 V ID = 1 mA IDSS VGS = 0 V VDS = 26 V IGSS VGS = 5 V VGS(Q) VDS = 26 V ID = TBD VDS(ON) VGS = 10 V ID = 0.5 A Min. Typ. Max. Unit 65 VDS = 0 V 2.0 1 µA 1 µA 5.0 V 0.9 V gFS VDS = 10 V ID = 800 mA TBD mho CISS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF COSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF CRSS VGS = 0 V VDS = 26 V f = 1 MHz TBD pF DYNAMIC (f = 960 MHz) Symbol POUT(1) ηD (1) Load mismatch Test Conditions VDD = 26 V IDQ = TBD VDD = 26 V IDQ = TBD POUT = 6 W IDQ = TBD VDD = 26 V ALL PHASE ANGLES POUT = 6 W Min. Typ. Max. Unit 7 8 W 55 65 % 10:1 VSWR Max. Unit (1) 1 dB Compression point DYNAMIC (f = 920 - 960 MHz) Symbol Test Conditions Typ. 6 7 Pout(1) VDD = 26 V IDQ = TBD GP VDD = 26 V IDQ = TBD POUT = 6 W 17 VDD = 26 V IDQ = TBD POUT = 6 W 55 ηD (1) (1) 1 dB Compression point 2/4 Min. W dB 60 % LET9006 PowerFLAT™ MECHANICAL DATA DIM. mm MIN. TYP. Inch MAX MIN. TYP. MAX A 0.90 1.00 0.035 0.039 A1 A3 0.02 0.24 0.05 0.001 0.009 0.002 AA 0.15 0.25 0.35 0.006 0.01 0.014 b c 0.43 0.64 0.51 0.71 0.58 0.79 0.017 0.025 0.020 0.028 0.023 0.031 D 5.00 0.197 d 0.30 0.011 E E2 5.00 2.49 2.57 0.197 2.64 0.098 0.101 e f 1.27 3.37 g 0.74 0.03 h 0.21 0.008 0.104 0.050 0.132 3/4 LET9006 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4