LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN M243 epoxy sealed • ESD PROTECTION DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications. ORDER CODE LET9060C BRANDING LET9060C PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage -0.5 to +15 V 7 A 118 W ID PDISS Tj TSTG Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature 200 °C -65 to +150 °C 1.1 °C/W THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance November, 4 2002 1/5 LET9060C ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 100 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.8 V 65 V 2.0 0.7 GFS VDS = 10 V ID = 3 A 2.3 mho CISS VGS = 0 V VDS = 28 V f = 1 MHz 69.5 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 38 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 1.6 pF DYNAMIC Symbol Test Conditions Min. Typ. 60 65 W f = 945 MHz 17.3 dB POUT = 60 W f = 945 MHz 60 % POUT = 60 W f = 945 MHz P1dB VDD = 26 V IDQ = 250 mA GP VDD = 26 V IDQ = 250 mA POUT = 60 W ηD VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA ALL PHASE ANGLES Load mismatch f = 945 MHz Max. 5:1 IMPEDANCE DATA D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S 2/5 FREQ. ZIN (Ω) ZDL(Ω) 925 MHz TBD TBD 945 MHz TBD TBD 960 MHz TBD TBD Unit VSWR LET9060C TYPICAL PERFORMANCE Efficiency vs. Output Power Power Gain vs. Output Power 22 70 60 20 50 Eff (%) Gp (dB) 18 16 40 30 14 20 12 f = 945 MH z Vc c = 26 V Idq = 250 m A 10 10 f = 945 MHz Vc c = 26 V Idq = 250 m A 0 0 10 20 30 40 P out (W ) 50 60 70 80 0 10 20 30 40 50 60 70 80 P ou t (W ) 3/5 LET9060C M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. MAX MIN. TYP. MAX A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 Controlling dimension: Inches 4/5 TYP. Inch 1022142E LET9060C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5