FAIRCHILD FDPF5N50NZF

UniFET-II TM
FDP5N50NZF / FDPF5N50NZF
N-Channel MOSFET
500V, 4.2A, 1.75Ω
Features
Description
• RDS(on) = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
• Low Gate Charge ( Typ. 9nC)
• Low Crss ( Typ. 4pF)
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor
correction.
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
GDS
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP5N50NZF
FDPF5N50NZF
500
Units
V
±25
V
-Continuous (TC = 25oC)
4.2
4.2*
-Continuous (TC = 100oC)
2.5
2.5*
- Pulsed
16
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
( Note 1)
4.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
7.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 1)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
16*
- Derate above 25oC
A
165
(Note 3)
(TC = 25oC)
A
mJ
20
V/ns
78
30
W
0.62
0.24
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP5N50NZF
FDPF5N50NZF
RθJC
Thermal Resistance, Junction to Case
1.6
4.1
RθCS
Thermal Resistance, Case to Heat Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FDP5N50NZF / FDPF5N50NZF Rev. C0
1
Units
o
C/W
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
February 2012
Device Marking
FDP5N50NZF
Device
FDP5N50NZF
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF5N50NZF
FDPF5N50NZF
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.5
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, VGS = 0V,TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
3.0
-
5.0
V
-
1.57
1.75
Ω
-
4.2
-
S
ID = 250μA, Referenced to
25oC
μA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 2.1A
VDS = 20V, ID = 2.1A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V ID = 4.2A
VGS = 10V
(Note 4)
-
365
485
pF
-
50
65
pF
-
4
8
pF
-
9
12
nC
-
2
-
nC
-
4
-
nC
-
12
35
ns
-
19
50
ns
-
31
70
ns
-
22
55
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 4.2A
VGS = 10V, RGEN = 25Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
16
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 4.2A
-
-
1.5
V
trr
Reverse Recovery Time
-
87
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 4.2A
dIF/dt = 100A/μs
-
0.15
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18.7mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FDP5N50NZF / FDPF5N50NZF Rev. C0
2
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
1
ID, Drain Current[A]
ID, Drain Current[A]
Figure 2. Transfer Characteristics
10
10
0.1
o
150 C
1
o
25 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.03
0.1
0.1
3
25
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8
50
3.2
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
4
5
6
7
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.6
2.8
2.4
VGS = 10V
VGS = 20V
2.0
1.6
10
o
150 C
*Note: TC = 25 C
1.2
0
2
4
6
ID, Drain Current [A]
8
1
0.4
10
Figure 5. Capacitance Characteristics
o
25 C
*Notes:
1. VGS = 0V
o
2. 250μs Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 6. Gate Charge Characteristics
10
800
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
Capacitances [pF]
o
-55 C
Ciss
400
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
200
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
*Note: ID = 4.2A
0
1
10
VDS, Drain-Source Voltage [V]
FDP5N50NZF / FDPF5N50NZF Rev. C0
0
30
3
2
4
6
8
Qg, Total Gate Charge [nC]
10
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
vs. Case Temperature-FDPF5N50NZF
30
30μs
10
1.10
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.05
1.00
0.95
0.90
-75 -50
100μs
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
1. TC = 25 C
*Notes:
1. VGS = 0V
2. ID = 250μA
0
50
100
o
TJ, Junction Temperature [ C]
o
2. TJ = 150 C
3. Single Pulse
0.01
150
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 9. Maximum Drain Current
5
ID, Drain Current [A]
4
3
2
1
0
25
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve-FDPF5N50NZF
4.3
Thermal Response [ZθJC]
0.5
1
0.2
0.1
PDM
0.05
t1
0.02
0.1
t2
0.01
*Notes:
o
1. ZθJC(t) = 4.1 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FDP5N50NZF / FDPF5N50NZF Rev. C0
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
4
1
10
2
10
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FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP5N50NZF / FDPF5N50NZF Rev. C0
5
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP5N50NZF / FDPF5N50NZF Rev. C0
6
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Package Dimensions
TO-220
FDP5N50NZF / FDPF5N50NZF Rev. C0
7
www.fairchildsemi.com
FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : 2500V
Dimensions in Millimeters
FDP5N50NZF / FDPF5N50NZF Rev. C0
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDP5N50NZF / FDPF5N50NZF Rev. C0
9
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FDP5N50NZF / FDPF5N50NZF N-Channel MOSFET
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