FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. ID = 0.95 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested • RoHS Compliant D D ! G G S D ● ◀ S G! I-PAK D-PAK ▲ ● ● ! S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current IDM Drain Current FQD2N60C / FQU2N60C Unit 600 V - Continuous (TC = 25°C) 1.9 A - Continuous (TC = 100°C) 1.14 A - Pulsed (Note 1) 7.6 A ± 30 V VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25°C)* 2.5 W Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 44 W 0.35 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol FQD2N60C / FQU2N60C Parameter RθJC Thermal Resistance, Junction-to-Case, Max. RθJA RθJA Unit 2.87 °C/W Thermal Resistance, Junction-to-Ambient* 50 °C/W Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 1 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 Device Marking Device Package Reel Size Tape Width FQD2N60C FQD2N60C D-PAK - - FDU2N60C FDU2N60C I-PAK - - Electrical Characteristics Symbol Quantity TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.95 A -- 3.6 4.7 Ω gFS Forward Transconductance VDS = 40 V, ID = 0.95 A -- 5.0 -- S -- 180 235 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 20 25 pF -- 4.3 5.6 pF -- 9 28 ns -- 25 60 ns -- 24 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4, 5) -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC -- -- 1.9 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A -- -- 1.4 V trr Reverse Recovery Time 230 -- ns Reverse Recovery Charge VGS = 0 V, IS = 2 A, dIF / dt = 100 A/µs -- Qrr -- 1.0 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 2 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test -1 -2 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 25℃ ※ Note : TJ = 25℃ 0 -1 10 0 1 2 3 4 5 0.2 0.4 Figure 5. Capacitance Characteristics 500 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 300 Coss 200 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 150 Crss 100 1.4 VDS = 300V 8 VDS = 480V 6 4 2 50 0 -1 10 1.2 VDS = 120V 10 250 1.0 12 400 350 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] ※ Note : ID = 2A 0 10 0 1 10 ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 0 2 4 6 8 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.95 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 1.6 ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 0 10 10 ms 100 ms DC -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 0.8 0.4 -2 10 1.2 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response Figure 11. Typical Drain Current Slope vs. Gate Resistance 125 150 Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance D = 0 .5 10 100 TC, Case Temperature [℃] ※ N o te s : 1 . Z θ J C ( t) = 2 .8 7 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 t1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 4 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 6 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 7 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Mechanical Dimensions I-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev. C0 9 www.fairchildsemi.com FQD2N60C / FQU2N60C N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® AX-CAP * PowerTrench FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Programmable Active Droop™ Green Bridge™ Build it Now™ TinyBuck™ QFET® Green FPS™ CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® Quiet Series™ Gmax™ CROSSVOLT™ TINYOPTO™ RapidConfigure™ GTO™ CTL™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ® ISOPLANAR™ DEUXPEED TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ ® STEALTH™ MicroPak2™ Fairchild UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™