SUD15N15-95 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.095 @ VGS = 10 V 15 0.100 @ VGS = 6 V 15 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch D TO-252 Drain Connected to Tab G D G S Top View S Ordering Information: SUD15N15-95 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 15 ID 8.7 IDM 25 IS 15 IAR 15 EAR 11.3 A mJ 62b PD W 2.7a TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 16 20 45 55 2 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71641 S-31724—Rev. B, 18-Aug-03 www.vishay.com 1 SUD15N15-95 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 125_C 50 VDS = 120 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V 25 VGS = 10 V, ID = 15 A Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb rDS(on) DS( ) gfs V nA mA m A 0.077 0.095 VGS = 10 V, ID = 15 A, TJ = 125_C 0.190 VGS = 10 V, ID = 15 A, TJ = 175_C 0.250 VGS = 6 V, ID = 10 A 0.081 VDS = 15 V, ID = 15 A 25 W 0.100 S Dynamica Input Capacitance Ciss 900 VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Total Gate Chargec Qg 20 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 115 pF 25 5.5 VDS = 75 V,, VGS = 10 V,, ID = 15 A nC 7 1 3.2 td(on) 8 12 tr 35 55 17 25 30 45 td(off) VDD = 75 V, RL = 5 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W tf W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 25 A Diode Forward Voltageb VSD IF = 15 A, VGS = 0 V 0.9 1.5 V trr IF = 15 A, di/dt = 100 A/ms 55 85 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71641 S-31724—Rev. B, 18-Aug-03 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 5V 10 5 3V 15 10 TC = 125_C 5 25_C 4V - 55_C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 40 0.14 TC = - 55_C 0.12 25_C 24 r DS(on)- On-Resistance ( W ) g fs - Transconductance (S) 32 125_C 16 8 0 0.10 VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 0 5 10 15 20 25 0 5 10 ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 600 300 Crss 25 32 40 Gate Charge 20 1200 900 20 ID - Drain Current (A) Capacitance 1500 15 Coss 0 VDS = 75 V ID = 15 A 16 12 8 4 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Document Number: 71641 S-31724—Rev. B, 18-Aug-03 100 0 8 16 24 Qg - Total Gate Charge (nC) www.vishay.com 3 SUD15N15-95 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.8 100 VGS = 10 V ID = 15 A 2.0 I S - Source Current (A) r DS(on)- On-Resistance ( W ) (Normalized) 2.4 1.6 1.2 0.8 TJ = 150_C 10 TJ = 25_C 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 1 175 0 TJ - Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 20 Safe Operating Area 100 I D - Drain Current (A) I D - Drain Current (A) 10 5 100 ms 10 1 ms 1 10 ms 100 ms 1 s, dc TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance 10 ms Limited by rDS(on) 15 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71641 S-31724—Rev. B, 18-Aug-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1