FAIRCHILD FDD7N25LZTM

FDD7N25LZ
N-Channel UniFETTM MOSFET
250 V, 6.2 A, 550 m
Description
Features
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• RDS(on) = 430 m (Typ.) @ VGS = 10 V, ID = 3.1 A
• Low Gate Charge (Typ.12 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
D-PAK
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDD7N20LZ
250
Unit
V
±20
V
- Continuous (TC = 25oC)
6.2
3.7
ID
Drain Current
- Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
5.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
10
V/ns
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
25
A
(Note 2)
115
mJ
(Note 3)
(TC = 25oC)
- Derate above 25oC
A
56
W
0.45
W/oC
-55 to +150
oC
300
oC
FDD7N20LZ
Unit
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction to Case, Max.
2.2
RJA
Thermal Resistance, Junction to Ambient, Max.
110
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
1
o
C/W
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
March 2013
Device Marking
FDD7N25LZ
Device
FDD7N25LZ
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
250
-
-
V
-
0.25
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
-
-
1
VDS = 200V, TC = 125oC
-
-
10
IGSSF
Gate to Body Leakage Current, Forward
VGS = 20V, VDS = 0V
-
-
10
A
IGSSR
Gate to Body Leakage Current, Reverse
VGS = -20V, VDS = 0V
-
-
-10
A
ID = 250A, Referenced to
25oC
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = VDS, ID = 250A
1.0
-
2.0
V
VGS = 10V, ID = 3.1A
-
0.43
0.55
VGS = 5V, ID = 3.1A
-
0.45
0.57

VDS = 20V, ID = 3.1A
-
7
-
VDS = 25V, VGS = 0V
f = 1MHz
-
480
635
pF
-
65
85
pF
-
8
12
pF
-
12
16
nC
-
1.5
-
nC
-
4
-
nC
-
10
30
ns
-
15
40
ns
-
75
160
ns
-
30
70
ns
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 250V ID = 6.2A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 6.2A
VGS = 10V, RG = 25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
5.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
20
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 6.2A
-
-
1.4
V
trr
Reverse Recovery Time
-
130
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 6.2A
dIF/dt = 100A/s
-
0.6
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, IAS = 6.2A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 6.2A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
2
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
20
VGS = 10.0V
7.0V
5.0V
3.5V
3.0V
2.5V
10
ID, Drain Current[A]
ID, Drain Current[A]
10
1
0.1
o
o
150 C
25 C
o
-55 C
1
* Notes :
1. VDS = 20V
2. 250s Pulse Test
*Notes:
1. 250s Pulse Test
o
2. TC = 25 C
0.03
0.03
0.1
0.1
1
VDS, Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
100
1.2
0.9
VGS = 10V
VGS = 20V
0.6
o
150 C
10
o
25 C
1
Notes:
1. VGS = 0V
o
* Note : TJ = 25 C
0.3
0
3
6
9
12
ID, Drain Current [A]
15
0.1
0.0
18
2. 250s Pulse Test
0.4
0.8
1.2
VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.5
RDS(on) [],
Drain-Source On-Resistance
2
3
4
VGS, Gate-Source Voltage[V]
Coss
100
* Note:
1. VGS = 0V
2. f = 1MHz
10
5
0.1
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 50V
VDS = 125V
VDS = 200V
8
6
4
2
* Note : ID = 6.2A
0
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
0
30
3
3
6
9
Qg, Total Gate Charge [nC]
12
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
0.9
* Notes :
1. VGS = 0V
2. ID = 250uA
0.8
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
2.0
1.5
1.0
* Notes :
1. VGS = 10V
2. ID = 3.1A
0.5
0
-80
160
Figure 9. Maximum Safe Operating Area
- FDD7N25LZ
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
40
6
30s
100s
5
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
* Notes :
4
3
2
o
1. TC = 25 C
1
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage [V]
0
25
400
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
- FDD7N25LZ
Thermal Response [ZJC]
5
1
0.5
0.2
PDM
0.1
t1
0.05
0.1
t2
0.02
0.01
* Notes :
o
1. ZJC(t) = 2.2 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.01
-5
10
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
4
-1
10
1
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
Typical Performance Characteristics (Continued)
FDD7N25LZ N-Channel UniFETTM MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
5
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
6
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
8
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFETTM MOSFET
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