FAIRCHILD MJD127TF

MJD127
MJD127
D-PAK for Surface Mount Applications
•
•
•
•
•
•
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP127
Complement to MJD122
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Equivalent Circuit
Parameter
Collector-Base Voltage
Value
- 100
Units
V
VCEO
Collector-Emitter Voltage
- 100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
ICP
Collector Current (Pulse)
VCBO
-8
A
- 16
A
IB
Base Current
- 120
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
C
B
R1
R2
R 1 ≅ 8 kΩ
R 2 ≅ 0.12 k Ω
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
*Collector-Emitter Sustaining Voltage
Test Condition
IC = - 30mA, IB = 0
ICEO
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE
*DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, VEB = -8A
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = - 4A, IB = - 16mA
IC = - 8A, IB = - 80mA
Min.
- 100
Max.
Units
V
VCE = - 50V, IB = 0
- 10
µA
VCB = - 100V, IE = 0
- 10
µA
-2
mA
1000
100
12K
-2
-4
V
V
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = - 8A, IB = - 80mA
- 4.5
VBE(on)
*Base-Emitter ON Voltage
VCE = -4V, IC = - 4A
- 2.8
V
Cob
Output Capacitance
VCB = - 10V, IE = 0
f= 0.1MHz
300
pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD127
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
10k
hFE, DC CURRENT GAIN
VCE = -4V
1k
100
-0.1
-1
-10
-10
IC = 250 IB
VBE(sat)
-1
V CE(sat)
-0.1
-0.01
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
tR,tD [µs], TURN ON TIME
Cob[pF], CAPACITANCE
VCC= -30V
IC = 250IB
IB1= IB2
100
10
1
-0.1
-1
-10
1
tR
tD, VBE(off)=0
0.1
0.01
-0.1
-100
Figure 3. Collector Output Capacitance
-10
Figure 4. Turn On Time
-100
10
VCC= -30V
IC =250IB
IB1=IB2
IC[A], COLLECTOR CURRENT
tSTG,tF [µs], TURN OFF TIME
-1
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR BASE VOLTAGE
tSTG
1
tF
10
-10
50
1m
5m s
D s
0µ
s
0µ
s
C
-1
-0.1
-0.01
0.1
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
-10
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A2, June 2001
MJD127
Typical Characteristic
(Continued)
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD127
Package Demensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
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or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3