FDB110N15A N-Channel PowerTrench® MOSFET 150 V, 92 A, 11 mΩ Features Description • RDS(on) = 9.25 mΩ ( Typ.) @ VGS = 10 V, ID = 92 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D D G G S D2-PAK (TO263) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Unit V ±20 V -Continuous (TC = 25oC) 92 65 ID Drain Current -Continuous (TC = 100oC) IDM Drain Current - Pulsed EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt A (Note 1) 369 A (Note 2) 365 mJ 6 V/ns (Note 3) (TC = 25oC) 234 W - Derate above 25oC 1.56 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDB110N15A 150 -55 to +175 o C 300 o C Thermal Characteristics Symbol Parameter FDB110N15A RθJC Thermal Resistance, Junction to Case, Max. 0.64 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 1 Unit oC/W www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET March 2013 Device Marking FDB110N15A Device FDB110N15A Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 150 - - V - 0.09 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 9.25 11.0 mΩ - 118 - S - 3390 4510 pF - 334 445 pF - 14 - pF - 583 - pF - 47 61 nC - 16 - nC - 7.9 - nC - 9.7 - nC - 25 60 ns - 26 62 ns - 46 102 ns - 14 38 ns - 2.5 - Ω ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 92A VDS = 10V, ID = 92A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Releted Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS = 75V, VGS = 0V f = 1MHz VDS = 75V, ID = 92A VGS = 10V, VDS = 75V ID = 92A (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance (G-S) VDD = 75V, ID = 92A VGS = 10V, RGEN = 4.7Ω (Note 4) f = 1MHz Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 92 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 369 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 92A - - 1.25 V trr Reverse Recovery Time - 89 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 92A, VDD = 75V dIF/dt = 100A/μs - 255 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 15.6A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 92A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 2 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 500 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C o -55 C 10 *Notes: 1. 250μs Pulse Test 10 o 2. TC = 25 C 5 0.1 1 1 VDS, Drain-Source Voltage[V] 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 24 500 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 3 4 5 6 VGS, Gate-Source Voltage[V] 20 16 VGS = 10V VGS = 20V 12 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 8 0 50 100 150 200 250 ID, Drain Current [A] 300 1 0.0 350 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 10 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 Crss VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 *Note: ID = 92A 0 100 200 0 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 92A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area vs. Case Temperature -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current 1000 100 VGS = 10V 80 100 100μs ID, Drain Current [A] ID, Drain Current [A] 10μs 10 1ms Operation in This Area is Limited by R DS(on) 1 10ms DC *Notes: o 0.1 60 40 20 1. TC = 25 C o o 0.01 0.1 RθJC = 0.64 C/W 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 300 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Eoss vs. Drain to Source Voltage 4 EOSS, [μJ] 3 2 1 0 0 25 50 75 100 125 VDS, Drain to Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 150 4 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB110N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.02 0.01 t1 0.01 t2 *Notes: Single pulse o 1. ZθJC(t) = 0.64 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 6 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 7 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2011 Fairchild Semiconductor Corporation FDB110N15A Rev. C0 9 www.fairchildsemi.com FDB110N15A N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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