FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • High Input Impedance • Fast Swiching: EOFF = 6.5 uJ/A • Tightened Parameter Distribution • RoHS Compliant Applications • Sewing Machine, CNC • Home Appliances, Motor-Control C G E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC ICM (1) IF IFM (1) PD 25oC Collector Current @ TC = Collector Current @ TC = 100oC Pulsed Collector Current Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC Pulsed Diode Maximum Forward Current 25oC Maximum Power Dissipation @ TC = Maximum Power Dissipation @ TC = 100oC 80* A 40* A 120* A 40* A 20* A 120* A 115 W 58 W TJ Operating Junction Temperature -55 to +175 o Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 C o C Notes: *Drain current limited by maximum junction temperature 1: Repetitive rating: Pulse width limited by max. junction temperature ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 1 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT May 2013 Symbol RθJC(IGBT) Parameter Typ. Max. - 1.3 o C/W o C/W Thermal Resistance, Junction to Case RθJC(Diode) Thermal Resistance, Junction to Case - 3.27 RθJA Thermal Resistance, Junction to Ambient - 40 Unit oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGAF40N60SMD FGAF40N60SMD TO-3PF - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 3.5 4.5 6.0 V IC = 40A, VGE = 15V - 1.9 - V IC = 40A, VGE = 15V, TC = 175oC - 2.1 - V - 1880 - pF VCE = 30V, VGE = 0V, f = 1MHz - 180 - pF - 50 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - 12 - ns tr Rise Time - 20 - ns td(off) Turn-Off Delay Time - 92 - ns tf Fall Time - 13 17 ns Eon Turn-On Switching Loss - 0.87 - mJ Eoff Turn-Off Switching Loss - 0.26 0.34 mJ Ets Total Switching Loss - 1.13 - mJ td(on) Turn-On Delay Time - 15 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay Time - 116 - ns tf Fall Time - 16 - ns Eon Turn-On Switching Loss - 0.97 - mJ Eoff Turn-Off Switching Loss - 0.60 - mJ Ets Total Switching Loss - 1.57 - mJ ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 40A, RG = 6Ω, VGE = 15V, Inductive Load, TC = 175oC 2 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Thermal Characteristics Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter Min. Typ. Max Unit - 119 - nC - 13 - nC - 58 - nC Min. Typ. Max Unit TC = 25°C unless otherwise noted Test Conditions - 2.3 - TC = 175oC - 1.67 - Reverse Recovery Energy TC = 175oC - 48.9 - trr Diode Reverse Recovery Time TC = 25oC - 36 - TC = 175oC - 110 - Qrr Diode Reverse Recovery Charge TC = 25oC - 46.8 - - 445 - VFM Diode Forward Voltage Erec ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 TC = 25oC IF = 20A IF =20A, dIF/dt = 200A/µs TC = 3 175oC V uJ ns nC www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics VGE= 20V Figure 2. Typical Output Characteristics 120 12V 90 VGE= 20V 15V Collector Current, IC [A] Collector Current, IC [A] 120 10V 60 30 o TC = 25 C 90 15V 12V 10V 60 8V 30 o 8V 0 0 TC = 175 C 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 120 120 90 60 Common Emitter VGE = 15V 30 o Collector Current, IC [A] Collector Current, IC [A] Common Emitter VCE = 20V TC = 25 C 90 o TC = 175 C 60 30 o TC = 25 C o TC = 175 C 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 80A 3 40A 2 IC = 20A Common Emitter o TC = -40 C 16 12 80A 8 4 40A 4 0 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGAF40N60SMD Rev. C4 15 20 Common Emitter VGE = 15V ©2012 Fairchild Semiconductor Corporation 3 6 9 12 Gate-Emitter Voltage,VGE [V] Figure 6. Saturation Voltage vs. VGE 4 1 25 0 IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 80A 8 40A 4 0 IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 o TC = 175 C 16 12 80A 8 40A 4 IC = 20A 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 4000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o TC = 25 C Capacitance [pF] 3000 Cies 2000 1000 Coes TC = 25 C 400V 12 VCC = 200V 300V 9 6 3 Cres 0 0.1 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 40 80 Gate Charge, Qg [nC] Figure 12. Turn-on Characteristics vs. Gate Resistance 200 100 100 10µs tr 1ms 10 Switching Time [ns] Collector Current, Ic [A] 100µs 10 ms DC 1 *Notes: 0.1 o 1. TC = 25 C td(on) 10 Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o 2. TJ =175 C 3. Single Pulse 0.01 0.1 120 1 10 100 Collector-Emitter Voltage, VCE [V] ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 o TC = 175 C 1 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 1000 1000 Common Emitter VGE = 15V, RG = 6Ω o TC = 25 C 100 tf Common Emitter VCC = 400V, VGE = 15V IC = 40A 10 o Switching Time [ns] Switching Time [ns] td(off) TC = 175 C 100 tr 10 td(on) o TC = 25 C o TC = 175 C 1 0 10 20 30 40 1 20 50 30 40 50 60 70 80 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 5 Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 6Ω o Eon 1 Eoff IC = 40A o TC = 25 C TC = 25 C o o TC = 175 C 1 20 30 40 50 Common Emitter VCC = 400V, VGE = 15V 60 TC = 175 C 70 0.1 80 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 200 6 Collector Current, IC [A] Switching Loss [mJ] 100 Eon 1 Eoff Common Emitter VGE = 15V, RG = 6Ω o 10 Safe Operating Area TC = 25 C o VGE = 15V, TC = 175 C o TC = 175 C 0.1 20 1 30 40 50 60 70 80 Collector Current, IC [A] ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 6 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Power Dissipation 50 120 Common Emitter VGE = 15V 40 PD, Power Dissipation [W] Collector Current, Ic[A] Common Emitter VGE = 15V 30 20 10 0 25 50 75 100 125 150 175 o Collector-Emitter Case Temperature, TC [ C] 90 60 30 0 25 50 75 100 125 150 175 o Collector-Emitter Case Temperature, TC [ C] Figure 21. Load Current Vs. Frequency Figure 22. Forward Characteristics 100 120 Square Wave 110 o TJ < 175 C, D = 0.5, VCE = 400V VGE = 15/0V, RG = 6Ω Collector Current, IC [A] 100 Forward Current, IF [A] 90 80 70 o Tc = 75 C 60 o Tc = 100 C 50 40 30 o TC = 175 C 10 o TC = 25 C 20 10 1 0 1k 10k 100k Switching Frequency, f [Hz] 1M Figure 23. Reverse Current 0 1 2 3 Forward Voltage, VF [V] 4 Figure 24. Stored Charge 1000 700 Reverse Currnet, ICES [µ A] Stored Recovery Charge, Qrr [nC] o o 100 TC = 175 C 10 o TC = 100 C 1 0.1 o 0.01 TC = 25 C 1E-3 0 100 200 300 VR [V] ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 400 500 TC = 25 C 600 o TC = 175 C 500 400 300 200 di/dt = 200A/µs di/dt = 100A/µs 100 0 600 0 7 5 10 15 20 25 30 35 Forwad Current, IF [A] 40 45 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Typical Performance Characteristics FGAF40N60SMD 600 V 40 A Field Stop IGBT Typical Performance Characteristics Figure 25. Reverse Recovery Time 200 o Reverse Recovery Time, trr [ns] TC = 25 C o TC = 175 C 150 100 di/dt = 100A/µs di/dt = 200A/µs 50 0 0 5 10 15 20 25 30 35 Forward Current, IF [A] 40 45 Figure 26.Transient Thermal Impedance of IGBT 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 PDM t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] Figure 27.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 4 0.5 1 0.2 0.1 0.05 0.1 0.02 PDM 0.01 t1 0.01 1E-5 1E-4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. C4 8 www.fairchildsemi.com FGAF40N60SMD 600 V 40 A Field Stop IGBT Mechanical Dimensions TO-3PF Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FGAF40N60SMD Rev. 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