SuperFET® II FCP380N60E / FCPF380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • 650V @TJ = 150°C • Max. RDS(on) = 380mΩ • Ultra Low Gate Charge (Typ. Qg = 34nC) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. ® Consequently, SuperFET II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Low Effective Output Capacitance (Typ. Coss.eff = 97pF) • 100% Avalanche Tested D TO-220 G D S G TO-220F GD S S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted Parameter FCP380N60E FCPF380N60E Units 600 V - DC ±20 - AC (f > 1Hz) V ±30 V -Continuous (TC = 25oC) 10.2 10.2* 6.4 6.4* ID Drain Current -Continuous (TC = 100oC) - Pulsed IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 1.06 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt (Note 1) (Note 2) 30.6* 211.6 A mJ 20 MOSFET dv/dt V/ns 100 (TC = 25oC) 106 31 W - Derate above 25oC 0.85 0.25 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 30.6 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP380N60E FCPF380N60E Units RθJC Thermal Resistance, Junction to Case 1.18 4 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FCP380N60E / FCPF380N60E Rev. C4 1 oC/W www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET March 2012 Device Marking FCP380N60E Device FCP380N60E Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF380N60E FCPF380N60E TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V - 0.67 - V/oC - 700 - V μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 3.5 V - 0.32 0.38 Ω - 10 - S ID = 10mA, Referenced to 25oC VGS = 0V, ID = 10A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 5A VDS = 20V, ID = 5A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance - 1330 1770 pF - 945 1260 pF - 60 90 pF - 25 - pF VDS = 0V to 480V, VGS = 0V - 97 - pF - 34 45 nC VDS = 380V, ID = 5A VGS = 10V - 5.3 - nC VDS = 25V, VGS = 0V f = 1MHz (Note 4) Drain open - 13 - nC - 6 - Ω - 17 44 ns - 9 28 ns - 64 138 ns - 10 30 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 5A VGS = 10V, RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30.6 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A - - 1.2 V trr Reverse Recovery Time 240 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 3 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5.1A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCP380N60E / FCPF380N60E Rev. C4 2 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.7 0.6 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 0.2 *Note: TC = 25 C 0 5 10 15 20 ID, Drain Current [A] 25 1 0.2 30 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage [V] 1.6 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 10000 Ciss 1000 Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.8 RDS(ON) [Ω], Drain-Source On-Resistance 2 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.5 0.1 6 4 2 Crss *Note: ID = 5A 0 1 10 100 VDS, Drain-Source Voltage [V] FCP380N60E / FCPF380N60E Rev. C4 VDS = 120V VDS = 300V VDS = 480V 8 600 3 0 5 10 15 20 25 30 Qg, Total Gate Charge [nC] 35 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.16 RDS(on), [Normalized] Drain-Source On-Resistance 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 10mA 0.92 0.88 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.4 2.0 1.6 1.2 *Notes: 1. VGS = 10V 2. ID = 5A 0.8 0.4 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature - FCP380N60E -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area vs. Case Temperature - FCPF380N60E 100 100 10μs ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 1ms 10 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: 100μs 1ms 10 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o o 1. TC = 25 C 1. TC = 25 C o 0.01 0.1 o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0.01 0.1 1000 12 6 10 5 8 4 6 2 2 1 0 FCP380N60E / FCPF380N60E Rev. C4 1 10 100 VDS, Drain-Source Voltage [V] 1000 3 4 50 75 100 125 o TC, Case Temperature [ C] 2. TJ = 150 C 3. Single Pulse Figure 12. Eoss vs. Drain to Source Voltage Switching Capability EOSS, [μJ] ID, Drain Current [A] Figure 11. Maximum Drain Current 0 25 160 150 4 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Typical Performance Characteristics (Continued) FCP380N60E / FCPF380N60E N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FCP380N60E Thermal Response [ZθJC] 2 1 0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 *Notes: 0.02 o 0.01 1. ZθJC(t) = 1.18 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 -4 -3 10 -2 10 10 Rectangular Pulse Duration [sec] -1 10 0 10 Figure 14. Transient Thermal Response Curve - FCPF380N60E Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 t2 0.01 *Notes: o 1. ZθJC(t) = 4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FCP380N60E / FCPF380N60E Rev. C4 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCP380N60E / FCPF380N60E Rev. C4 6 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCP380N60E / FCPF380N60E Rev. C4 7 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Mechanical Dimensions TO-220AB FCP380N60E / FCPF380N60E Rev. C4 8 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FCP380N60E / FCPF380N60E Rev. C4 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCP380N60E / FCPF380N60E Rev. C4 10 www.fairchildsemi.com FCP380N60E / FCPF380N60E N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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