STMICROELECTRONICS M74HC126

M54HC125
RAD-HARD QUAD BUS BUFFER (3-STATE)
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HIGH SPEED:
tPD = 8ns (TYP.) at VCC = 6V
LOW POWER DISSIPATION:
ICC = 4µA(MAX.) at TA=25°C
HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
WIDE OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 125
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9401-039
DILC-14
FPC-14
ORDER CODES
PACKAGE
FM
EM
DILC
FPC
M54HC125D
M54HC125K
M54HC125D1
M54HC125K1
The device requires the 3-STATE control input G
to be set high to place the output into the high
impedance state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
DESCRIPTION
The M54HC125 is an high speed CMOS QUAD
BUFFER (3-STATE) fabricated with silicon gate
C2MOS technology.
PIN CONNECTION
March 2004
1/9
M54HC125
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
SYMBOL
1, 4, 10, 13
2, 5, 9, 12
3, 6, 8, 11
7
1G TO 4G
1A TO 4A
1Y TO 4Y
GND
VCC
14
NAME AND FUNCTION
Output Enable Input
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
G
Y
X
L
H
H
L
L
Z
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply Voltage
Value
Unit
-0.5 to +7
V
VI
DC Input Voltage
-0.5 to VCC + 0.5
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
± 20
V
mA
IIK
DC Input Diode Current
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 35
mA
± 70
mA
ICC or IGND DC VCC or Ground Current
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
420
mW
-65 to +150
°C
265
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
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M54HC125
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
VI
Input Voltage
VO
Output Voltage
Top
Operating Temperature
Input Rise and Fall Time
tr, tf
Value
Unit
2 to 6
V
0 to VCC
V
0 to VCC
V
-55 to 125
°C
VCC = 2.0V
0 to 1000
ns
VCC = 4.5V
0 to 500
ns
VCC = 6.0V
0 to 400
ns
DC SPECIFICATIONS
Test Condition
Symbol
VIH
VIL
VOH
VOL
II
IOZ
ICC
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
High Impedance
Output Leakage
Current
Quiescent Supply
Current
Value
TA = 25°C
VCC
(V)
Min.
2.0
4.5
6.0
2.0
4.5
6.0
Typ.
Max.
1.5
3.15
4.2
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
1.5
3.15
4.2
0.5
1.35
1.8
Max.
1.5
3.15
4.2
0.5
1.35
1.8
Unit
V
0.5
1.35
1.8
2.0
IO=-20 µA
1.9
2.0
1.9
1.9
4.5
IO=-20 µA
4.4
4.5
4.4
4.4
6.0
IO=-20 µA
5.9
6.0
5.9
5.9
4.5
IO=-6.0 mA
4.18
4.31
4.13
4.10
6.0
IO=-7.8 mA
5.68
5.8
5.63
5.60
2.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=20 µA
0.0
0.1
0.1
0.1
V
V
6.0
IO=20 µA
0.0
0.1
0.1
0.1
4.5
IO=6.0 mA
0.17
0.26
0.33
0.40
6.0
IO=7.8 mA
0.18
0.26
0.33
0.40
6.0
VI = VCC or GND
± 0.1
±1
±1
µA
6.0
VI = VIH or VIL
VO = VCC or GND
± 0.5
±5
± 10
µA
6.0
VI = VCC or GND
4
40
80
µA
V
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M54HC125
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6ns)
Test Condition
Symbol
Parameter
tTLH tTHL Output Transition
Time
tPLH tPHL Propagation Delay
Time
tPZL tPZH High Impedance
Output Enable
Time
tPLZ tPHZ High Impedance
Output Disable
Time
VCC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Value
TA = 25°C
CL
(pF)
Min.
50
50
150
50
RL = 1 KΩ
150
RL = 1 KΩ
50
RL = 1 KΩ
Typ.
Max.
20
6
5
36
9
8
52
13
11
36
9
8
52
13
11
48
12
10
60
12
10
75
15
13
105
21
18
75
15
13
105
21
18
80
16
14
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
75
15
13
95
19
16
130
26
22
95
19
16
130
26
22
100
20
17
Unit
Max.
90
18
15
110
22
19
160
32
27
110
22
19
160
32
27
120
24
20
ns
ns
ns
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
VCC
(V)
Value
TA = 25°C
Min.
Typ.
Max.
10
CIN
Input Capacitance
5.0
5
CPD
Power Dissipation
Capacitance (note
1)
5.0
35
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
10
Unit
Max.
10
pF
pF
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per buffer)
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M54HC125
TEST CIRCUIT
TEST
tPLH, tPHL
SWITCH
Open
tPZL, tPLZ
VCC
tPZH, tPHZ
GND
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω))
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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M54HC125
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
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M54HC125
DILC-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
2.1
22.54
0.083
0.100
a1
3.00
3.70
0.118
0.146
a2
0.63
0.88
1.14
0.025
0.035
0.045
B
1.82
2.03
2.39
0.072
0.080
0.094
b
0.40
0.45
0.50
0.016
0.018
0.020
b1
0.20
0.254
0.30
0.008
0.010
0.012
D
18.79
19.00
19.20
0.740
0.748
0.756
e
7.36
7.62
7.87
0.290
0.300
0.310
e1
2.54
0.100
e2
15.11
15.24
15.37
0.595
0.600
0.605
e3
7.62
7.87
8.12
0.300
0.310
0.320
F
7.11
7.75
0.280
I
0.305
3.70
K
10.90
L
1.14
1.27
0.146
12.1
0.429
1.5
0.045
0.476
0.050
0.059
0016173H
7/9
M54HC125
FPC-14 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
6.75
6.91
7.06
0.266
0.272
0.278
B
9.76
9.95
10.14
0.384
0.392
0.399
C
1.49
1.95
0.059
D
0.10
0.127
0.15
0.004
0.005
0.006
E
7.50
7.62
7.75
0.295
0.300
0.305
F
G
1.27
0.38
0.050
0.43
H
L
0.077
0.48
0.015
0.017
6.0
0.019
0.236
18.75
22.0
0.738
0.866
M
0.38
0.015
N
4.31
0.170
G
F
D
H
14
8
L
N
A
7
1
H
E
B
8/9
M
C
016029E
M54HC125
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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