STMICROELECTRONICS M74HC4316TTR

M74HC4316
QUAD BILATERAL SWITCH
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HIGH SPEED:
tPD = 13ns (TYP.) at VCC = 6V
LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at Vcc = 5V
LOW ”ON” RESISTANCE:
120Ω TYP. (VCC - VEE = 2V)
50Ω TYP. (VCC - VEE = 4.5V)
35Ω TYP. (VCC - VEE = 9V)
WIDE ANALOG INPUT VOLTAGE
RANGE ± 6v
LOW CROSSTALK BETWEEN SWITCHES
FAST SWITCHING
SINE WAVE DISTORTION:
0.020 at VCC - VEE = 9V
HIGH NOISE IMMUNITY:
VNIH = V NIL = 28 % VCC (MIN.)
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 4316
DESCRIPTION
The M74HC4316 is an high speed CMOS QUAD
BILATERAL SWITCH fabricated with silicon gate
C2MOS technology.
This device has four independent analogue
switches. Each switch has two input/output
terminals (nI/O, nO/I) and an active high select
input (nC).
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
TUBE
DIP
SOP
TSSOP
M74HC4316B1R
M74HC4316M1R
T &R
M74HC4316RM13TR
M74HC4316TTR
When the enable input is high, all four analog
switches are off. The supply voltage for the digital
signals applied to VCC and GND must be whitin
the range 0 to 6 V. The voltage swing on the
analogue Inputs/Outputs can be between VCC
(positive limit) and VEE (negative limit). The
voltage between VCC and VEE must not exceed
12V.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
1/11
M74HC4316
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
SYMBOL
NAME AND FUNCTION
1, 4, 10, 13
1 to 4 I/O
2, 3, 11, 12
1 to 4 O/I
7
E
15, 5, 6, 14
1C to 4C
9
VEE
Negative Supply Voltage
8
16
GND
VCC
Positive Supply Voltage
Independent Inputs/Outputs
Independent Outputs/
Inputs
Enable Inputs (Active
LOW)
Enable Inputs (Active
High)
Ground (0V)
TRUTH TABLE
E
C
SWITCH FUNCTION
L
H
ON
L
H
L
X
OFF
OFF
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Supply Voltage
-0.5 to +7
V
VCC - VEE Supply Voltage
-0.5 to +13
V
V CC
VI
VI/O
Parameter
Control Input Voltage
Switch Input/Output Voltage
-0.5 to VCC + 0.5
V
VEE -0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
± 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Source Sink Current Per Output Pin
± 25
mA
ICC or IGND DC VCC or Ground Current
Power Dissipation
PD
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
± 50
mA
500(*)
mW
-65 to +150
°C
300
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
2/11
M74HC4316
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V CC
Supply Voltage
2 to 12
V
VEE
Supply Voltage
-6 to 0
V
VCC - VEE Supply Voltage
2 to 12
V
Input Voltage
0 to VCC
V
VI/O
Switch I/O Voltage
0 to VCC
V
Top
Operating Temperature
-55 to 125
°C
VI
Input Rise and Fall Time
tr, tf
VCC = 2.0V
0 to 1000
VCC = 4.5V
0 to 500
VCC = 6.0V
0 to 400
ns
DC SPECIFICATIONS
Test Conditio n
Symbol
VIHC
VILC
R ON
∆RON
IOFF
IIZ
IIN
Parameter
High Level
Control Input
Voltage
Low Level Control
Input Voltage
ON Resistance
Difference of ON
Resistance
between switches
Input/Output
Leakage Current
(SWITCH OFF)
Switch Input
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
Control Input
Current
VCC
(V)
2.0
4.5
6.0
2.0
4.5
6.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
TA = 25°C
VEE
(V)
Min.
Typ.
Max.
1.5
3.15
4.2
GND
-4.5
-6.0
GND
GND
-4.5
-6.0
GND
-4.5
-6.0
GND
VI = VIHC
VI/O = VCC to VEE
II/O = 0.1mA
VI = VIHC
VI/O = VCC or VEE
II/O = 0.1mA
VIN = VIHC or V ILC
VI/O = VCC to VEE
II/O = 0.1mA
GND
6.0
-6.0
-40 to 85°C
-55 to 125°C Unit
Min.
Min.
Max.
1.5
3.15
4.2
70
50
30
120
50
35
20
10
5
5
VOS= VCC or GND
V IS = VCC or GND
-6.0
VIN = VIHC or V ILC
6.0
6.0
Value
VOS= VCC or GND
Max.
1.5
3.15
4.2
V
0.5
1.35
1.8
170
85
70
180
80
60
40
15
10
10
±0.06
± 0.1
0.5
1.35
1.8
200
105
85
215
100
75
60
20
15
15
± 0.6
±1
0.5
1.35
1.8
±0.06
± 0.1
± 0.6
±1
±2
±2
µA
± 0.1
±1
±1
µA
V
Ω
Ω
±2
±2
µA
VIN = VIHC or V ILC
VI = VCC or GND
10 -5
3/11
M74HC4316
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
Test Condition
Symbol
ΦI/O
tPZL
tPZH
tPLZ
tPHZ
fMAX
Parameter
Phase Difference
Between Input
and Output
Output Enable
Time
(E, C - OUT)
Output Disable
Time
(E, C - OUT)
Maximum Control
Input Frequency
VCC
(V)
V EE
(V)
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
Value
TA = 25°C
Min.
-40 to 85°C -55 to 125°C Unit
Typ.
Max.
GND
GND
GND
-4.5
12
3
3
2
30
6
5
4
40
8
7
5
-6.0
GND
GND
GND
-4.5
-6.0
GND
GND
GND
-4.5
-6.0
GND
GND
GND
2
56
14
12
13
11
112
28
24
24
21
2
9
11
4
115
23
20
21
18
205
41
35
34
29
5
145
29
25
26
23
255
51
43
43
36
R L = 1KΩ
R L = 1KΩ
R L = 1KΩ
C L = 15 pF
VOUT = 1/2 VCC
Min.
Max.
Min.
Max.
ns
ns
ns
MHz
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
C IN
Input Capacitance
C I/O
Switch Terminal
Capacitance
Feed Through
Capacitance
Power Dissipation
Capacitance
(note 1)
C IOS
CPD
TA = 25°C
VCC
(V)
4.5
4.5
Value
Min.
-4.5
-4.5
5.0
Typ.
Max.
5
10
-40 to 85°C
-55 to 125°C
Min.
Min.
Max.
10
Unit
Max.
10
pF
5
pF
1
pF
16
pF
GND
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
4/11
M74HC4316
ANALOG SWITCH CHARACTERISTICS (GND = 0V;TA = 25°C)
Symbol
Parameter
Sine Wave
Distortion (THD)
fMAX
Frequency
Response
(Switch ON)
Feed through
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal
Output)
Crosstalk
(Between Any
Switches)
Test Condition
VIN
(Vp-p)
Value Unit
VCC
(V)
VEE
(V)
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
2.25
4.5
6.0
0.025
2.25
4
fIN = 1 KHz RL = 10 KΩ, CL = 50 pF
4.5
8
0.020 %
6.0
11
0.018
2.25
Adjust fIN voltage to obtain 0 dBm at VOS.
28
Increase fIN Frequency until dB meter reads -3dB
4.5
42 MHz
RL = 50Ω, CL = 10 pF, fIN = 1MHz sine wave
6.0
43
-50
2.25
VIN is centered at VCC/2. Adjust input for 0 dBm
R L = 600Ω, C L = 50 pF, fIN = 1MHz sine wave
4.5
-50
dB
6.0
-50
2.25
4.5 R L = 600Ω, CL = 50 pF, fIN = 1MHz square wave (tr = tf =6ns)
5
mV
6.0
2.25
Adjust VIN to Obtain 0 dBm at input
-50
R L = 600Ω, C L = 50 pF, fIN = 1MHz sine wave
4.5
-50
dB
6.0
-50
Typ.
5/11
M74HC4316
SWITCHING CARACTERISTICS TEST CIRCUIT
CONTROL
ENABLE
CROSSTALK (control to output)
CROSSTALK BETWEEN ANY TWO SWITCHES
BANDWIDTH AND FEEDTHROUGH ATTENUATION
MAXIMUM CONTROL FREQUENCY
6/11
M74HC4316
CHANNEL RESISTANCE (RON)
ICC (Opr.)
7/11
M74HC4316
Plastic DIP-16 (0.25) MECHANICAL DATA
mm.
inch
DIM.
MIN.
a1
0.51
B
0.77
TYP
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
8/11
M74HC4316
SO-16 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
10
0.385
0.393
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
PO13H
9/11
M74HC4316
TSSOP16 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
A
MAX.
MIN.
TYP.
MAX.
1.2
A1
0.05
A2
0.8
b
0.047
0.15
0.002
0.004
0.006
1.05
0.031
0.039
0.041
0.19
0.30
0.007
0.012
c
0.09
0.20
0.004
0.0089
D
4.9
5
5.1
0.193
0.197
0.201
E
6.2
6.4
6.6
0.244
0.252
0.260
E1
4.3
4.4
4.48
0.169
0.173
0.176
1
e
0.65 BSC
K
0°
L
0.45
A
0.60
0.0256 BSC
8°
0°
0.75
0.018
8°
0.024
0.030
A2
A1
b
e
K
c
L
E
D
E1
PIN 1 IDENTIFICATION
1
0080338D
10/11
M74HC4316
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this pub lication are subject to change without notice. Thi s pub lication supersedes and replaces all information
previously supplied. STMicroelectronics prod ucts are not authori zed for use as critical components in life suppo rt devices or
systems without express written approval of STMicroelectronics.
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11/11