TCET120.(G) up to TCET2200 Vishay Semiconductors Optocoupler with Phototransistor Output Description The TCET120./ TCET2200 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 8-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 15123 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Emitter Coll. 15115 VDE Standards These couplers perform safety functions according to the following equipment standards: Anode Cath. 4 PIN D VDE 0884 8 PIN Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication processing apparatus and data D IEC 65 C Safety for mains-operated electronic and related household apparatus Document Number 83501 Rev. A2, 08–Feb–01 www.vishay.com 1 (12) TCET120.(G) up to TCET2200 Vishay Semiconductors Order Instruction Ordering Code CTR Ranking TCET1200/ TCET1200G1) 50 to 600% TCET1201/ TCET1201G1) 40 to 80% 1) TCET1202/ TCET1202G 63 to 125% TCET1203/ TCET1203G1) 100 to 200% TCET1204/ TCET1204G1) 160 to 320% TCET2200 50 to 600% 1) G = Leadform 10.16 mm; G is not marked on the body Remarks 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 4 Pin = Single channel 8 Pin = Dual channel Features Approvals (are applied): D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness through insulation ≥ 0.75 mm D Internal creepage distance > 4 mm Certificate number 202117 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection D CSA (C-UL) 1577 recognized file number E- 76222 - Double Protection D VDE 0884, Certificate number 115667 VDE 0884 related features: D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS www.vishay.com 2 (12) General features: D CTR offered in 5 groups D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2200 optional; suffix letter ‘G’ is not marked on the optocoupler D Coupling System U Document Number 83501 Rev. A2, 08–Feb–01 TCET120.(G) up to TCET2200 Vishay Semiconductors Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM PV Tj Value 6 60 1.5 100 125 Unit V mA A mW °C Symbol VCEO VECO IC ICM PV Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Value 5 250 –40 to +100 Unit kV mW °C Tstg Tsd –55 to +125 260 °C °C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature Document Number 83501 Rev. A2, 08–Feb–01 Test Conditions Tamb ≤ 25°C 2 mm from case t ≤ 10 s www.vishay.com 3 (12) TCET120.(G) up to TCET2200 Vishay Semiconductors Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = ± 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 70 7 Typ. Max. 10 100 Unit V V nA Test Conditions IF = 10 mA, IC = 1 mA Symbol VCEsat Min. Typ. Max. 0.3 Unit V VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz fc 110 kHz Ck 0.3 pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance W Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA www.vishay.com 4 (12) Type TCET1200(G)/ TCET2200 TCET1201(G) TCET1202(G) TCET1203(G) TCET1204(G) Symbol CTR Min. 0.50 CTR CTR CTR CTR 0.40 0.63 1.0 1.6 Typ. Max. 6.0 Unit 0.8 1.25 2.0 3.2 Document Number 83501 Rev. A2, 08–Feb–01 TCET120.(G) up to TCET2200 Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature Insulation Rated Parameters (according to VDE 0884) Parameter Partial discharge test voltage – Routine test Partial discharge g test voltage g – Lot test (sample test) Test Conditions 100%, ttest = 1 s Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C tTr = 60 s, ttest = 10 s, (see figure 2) Symbol Vpd Min. 1.6 VIOTM Vpd RIO RIO 8 1.3 1012 1011 RIO 109 Typ. Max. Unit kV kV kV W W W Ptot – Total Power Dissipation ( mW ) (construction test only) VIOTM 300 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Phototransistor Psi ( mW ) 250 200 VPd 150 VIOWM VIORM 100 IR-Diode Isi ( mA ) 50 0 0 0 94 9182 25 50 75 100 125 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Document Number 83501 Rev. A2, 08–Feb–01 150 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 www.vishay.com 5 (12) TCET120.(G) up to TCET2200 Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time IF 0 Test Conditions VS = 5 V, IC = 2 mA, RL = 100 ((see figure g 3)) Symbol td tr ton ts tf toff ton toff W VS = 5 V, IF = 10 mA, RL = 1 k W ((see figure g 4)) Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 +5V IF W IF 0 t tp m m m m m m m m m 96 11698 IC = 2 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 s Unit s s s s s s s s IC Channel I Oscilloscope 50 W 100 Channel II W RL = 1 M W 100% 90% CL = 20 pF 95 10804 Figure 3. Test circuit, non-saturated operation 10% 0 t tr ts td 0 IF ton +5V IF = 10 mA tp td tr ton (= td + tr) IC W RG = 50 tp = 0.01 T tp = 50 s m tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) storage time fall time turn-off time Figure 5. Switching times Channel I 50 W 1k W Channel II Oscilloscope RL > 1 M W CL < 20 pF 95 10843 Figure 4. Test circuit, saturated operation www.vishay.com 6 (12) Document Number 83501 Rev. A2, 08–Feb–01 TCET120.(G) up to TCET2200 Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 10000 Coupled device ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 300 250 200 Phototransistor 150 IR-diode 100 50 VCE=20V IF=0 1000 100 10 0 1 0 40 80 120 Tamb – Ambient Temperature ( °C ) 96 11700 0 Figure 6. Total Power Dissipation vs. Ambient Temperature IC – Collector Current ( mA ) I F – Forward Current ( mA ) 100 75 100 100.0 10.0 1.0 0.1 VCE=5V 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 96 11862 0.1 100 10 Figure 10. Collector Current vs. Forward Current 2.0 100 20mA IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 1.0 0.5 0 –25 1 IF – Forward Current ( mA ) 95 11027 Figure 7. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 50 Figure 9. Collector Dark Current vs. Ambient Temperature 1000.0 95 11025 25 Tamb – Ambient Temperature ( °C ) 95 11026 IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Document Number 83501 Rev. A2, 08–Feb–01 0.1 95 10985 1 100 10 VCE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 7 (12) TCET120.(G) up to TCET2200 1.0 t on / t off – Turn on / Turn off Time ( m s ) VCEsat – Collector Emitter Saturation Voltage ( V ) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 8 Non Saturated Operation VS=5V RL=100 W ton 6 toff 4 2 0 0 1 100 10 IC – Collector Current ( mA ) 95 11028 0 4 10 6 Figure 15. Turn on / off Time vs. Collector Current 50 m t on / t off – Turn on / Turn off Time ( s ) 1000 2 IC – Collector Current ( mA ) 95 11030 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 10 VCE=5V 100 10 1 Saturated Operation VS=5V RL=1k 40 W 30 toff 20 10 ton 0 0.1 1 100 10 IF – Forward Current ( mA ) 95 11029 Figure 13. Current Transfer Ratio vs. Forward Current Pin1 Indication 0 95 11031 5 10 15 20 IF – Forward Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current Type ET1100 820UTK63 15081 Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 14. Marking example www.vishay.com 8 (12) Document Number 83501 Rev. A2, 08–Feb–01 TCET120.(G) up to TCET2200 Vishay Semiconductors Dimensions of TCET120. in mm 14789 Document Number 83501 Rev. A2, 08–Feb–01 www.vishay.com 9 (12) TCET120.(G) up to TCET2200 Vishay Semiconductors Dimensions of TCET120.G in mm 14792 www.vishay.com 10 (12) Document Number 83501 Rev. A2, 08–Feb–01 TCET120.(G) up to TCET2200 Vishay Semiconductors Dimensions of TCET2200 in mm 14784 Document Number 83501 Rev. A2, 08–Feb–01 www.vishay.com 11 (12) TCET120.(G) up to TCET2200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 12 (12) Document Number 83501 Rev. A2, 08–Feb–01 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.