MJB32B ® PNP SILICON POWER TRANSISTOR ■ ■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP32B APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 3 DESCRIPTION The MJB32B is manufactured using Epitaxial-base Technology for use in medium power linear and switching applications. 1 D2PAK (TO-263) (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) -80 V V CEO Collector-Emitter Voltage (I B = 0) -80 V V EBO Emitter-Base Voltage (I C = 0) -5 V Collector Current -3 A Collector Peak Current -5 A Base Current -1 A 40 2 W W IC I CM IB P tot T stg Tj June 2001 Parameter o Total Dissipation at T case ≤ 25 C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/5 MJB32B THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.12 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I B = 0) Parameter V CE = -60 V -50 µA I CES Collector Cut-off Current (V BE = 0) V CE = -80 V -20 µA I EBO Emitter Cut-off Current (I C = 0) V EB = -5 V -0.1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ Test Conditions I C = -30 mA I C = -3 A V BE ∗ Base-Emitter Voltage I C = -3 A V CE = -4 V h FE ∗ DC Current Gain I C = -1 A I C = -3 A V CE = -4 V V CE = -4 V Small Signall Current Gain I B = -375 mA I C = -0.5 A V CE = -10 V I C = -0.5 A V CE = -10 V f = 1 KHz f = 1 MHz ∗ Pulsed : pulse duration = 300 µs, duty cycle ≤ 2% Safe Operating Area 2/5 Typ. -80 Collector-Emitter Saturation Voltage h fe Min. Derating Curves 25 10 20 3 V -1.2 V -1.8 V 50 MJB32B DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Capacitance 3/5 MJB32B TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. TYP. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.036 B2 1.14 1.70 0.044 0.067 C 0.45 0.60 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8.00 10.00 E1 0.368 0.315 10.40 0.393 8.50 0.409 0.334 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.40 1.75 0.055 0.068 M 2.40 3.2 0.094 0.126 8o 0o R V2 0.40 0o - Weight : 1.38 g (typ.) - The planaty of the slug must be within 30 µm 4/5 inch MAX. 0.016 8o P011P6/G MJB32B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5